This review summarizes the state-of-the-art in the search for room temperature
ferromagnetic semiconductors based on transition-metal-and rare-earth-doped nitrides. The …

This review seeks to extend the scope of both the experimental and theoreticalwork carried
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …

We present a theory of the electronic structure of GaN/AlN quantum dots (QD's), including
built-in strain and electric-field effects. A Green's function technique is developed to …

We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite
(WZ) and zinc-blende (ZB) crystal structures, as well as strained WZ GaN/AlGaN quantum …

It is shown that the optical properties of GaN quantum dots with the wurtzite structure result
from a balance between confinement and piezoelectric effects. In “large” quantum dots with …

GaN quantum dots (QDs) in an AlN matrix have been grown on Si (111) by molecular-beam
epitaxy. The growth of GaN deposited at 800° C on AlN has been investigated in situ by …

Self-assembled InGaN islands were grown by molecular-beam epitaxy on GaN, following a
Stranski–Krastanow growth mode. Atomic force microscopy revealed that their dimensions …

We have successfully grown nanometer-scale InGaN self-assembled quantum dots (QDs)
on a GaN surface without any surfactants, using atmospheric-pressure metalorganic …

We study the adsorption of Ga on (0001) GaN surfaces by reflection high-energy electron
diffraction. It is shown that a dynamically stable Ga bilayer can be formed on the GaN …

We employ density-functional theory (DFT) within the local-density approximation (LDA) and
generalized-gradient approximation (GGA) to study structural and electronic properties of …