This review article provides the state-of-art research and developments of the rectenna
device and its two main components–the antenna and the rectifier. Furthermore, the history …

High-performance semiconductor films with vertical compositions that are designed to
atomic-scale precision provide the foundation for modern integrated circuitry and novel …

Schottky diode (SD) has seen great improvements in the past few decades and, for many
THz applications, it is the most useful device. However, the use and recycling of forms of …

We demonstrate, for the first time, a CMOS compatible ferroelectric HfO 2-based two-
terminal non-volatile resistive switch; HfO 2 ferroelectric tunnel junction (FTJ). The device …

Understanding the resistance switching behavior of oxide-based memristive devices is
critical for evaluating their usefulness in nonvolatile memory and/or in artificial neural …

Moderate-temperature thermal sources (100° to 400° C) that radiate waste heat are often the
by-product of mechanical work, chemical or nuclear reactions, or information processing. We …

The impact of nanolaminate insulator tunnel barriers on asymmetric metal workfunction
metal-insulator-insulator-metal (MIIM) devices is investigated. We demonstrate …

High-frequency rectifiers are crucial for applications such as THz mixing,[1] infrared
detection,[2–5] solar energy harvesting,[6–11] THz electronics,[12, 13] and display …

Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and
nanolaminate Al 2 O 3-Ta 2 O 5 bilayer tunnel barriers deposited by atomic layer deposition …

The performance of metal-insulator-metal (MIM) diodes is investigated. In this paper, we
derive an analytical model that uses the Transfer Matrix Method based on the Airy Functions …