Spin-transfer torque magnetic random access memory (STT-MRAM)
Spin-transfer torque magnetic random access memory (STT-MRAM) is a novel, magnetic
memory technology that leverages the base platform established by an existing 100+ nm …
memory technology that leverages the base platform established by an existing 100+ nm …
Materials for spin-transfer-torque magnetoresistive random-access memory
Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) is an emerging
nonvolatile memory that uses magnetic tunnel junctions (MTJs) to store information. MTJs …
nonvolatile memory that uses magnetic tunnel junctions (MTJs) to store information. MTJs …
Spin-transfer torque magnetic memory as a stochastic memristive synapse for neuromorphic systems
AF Vincent, J Larroque, N Locatelli… - IEEE transactions on …, 2015 - ieeexplore.ieee.org
Spin-transfer torque magnetic memory (STT-MRAM) is currently under intense academic
and industrial development, since it features non-volatility, high write and read speed and …
and industrial development, since it features non-volatility, high write and read speed and …
Magnetoresistive random access memory
In this paper, a review of the developments in MRAM technology over the past 20 years is
presented. The various MRAM generations are described with a particular focus on spin …
presented. The various MRAM generations are described with a particular focus on spin …
Bioinspired programming of memory devices for implementing an inference engine
Cognitive tasks are essential for the modern applications of electronics, and rely on the
capability to perform inference. The Von Neumann bottleneck is an important issue for such …
capability to perform inference. The Von Neumann bottleneck is an important issue for such …
A fully functional 64 Mb DDR3 ST-MRAM built on 90 nm CMOS technology
ND Rizzo, D Houssameddine, J Janesky… - IEEE Transactions …, 2013 - ieeexplore.ieee.org
A spin torque magnetoresistive random access memory (ST-MRAM) holds great promise to
be a fast, high density, nonvolatile memory that can enhance the performance of a variety of …
be a fast, high density, nonvolatile memory that can enhance the performance of a variety of …
[图书][B] Phase change memory: From devices to systems
As conventional memory technologies such as DRAM and Flash run into scaling challenges,
architects and system designers are forced to look at alternative technologies for building …
architects and system designers are forced to look at alternative technologies for building …
Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy
Bit error rates below 10 ^-11 are reported for a 4-kb magnetic random access memory chip,
which utilizes spin transfer torque writing on magnetic tunnel junctions with perpendicular …
which utilizes spin transfer torque writing on magnetic tunnel junctions with perpendicular …
Spin-transfer-torque MRAM: the next revolution in memory
DC Worledge - 2022 IEEE international memory workshop …, 2022 - ieeexplore.ieee.org
This paper introduces the operation and features of Spin-Transfer-Torque Magnetoresistive
Random Access Memory (STT-MRAM), and provides a brief history of the field. Then the four …
Random Access Memory (STT-MRAM), and provides a brief history of the field. Then the four …
High density ST-MRAM technology
JM Slaughter, ND Rizzo, J Janesky… - 2012 International …, 2012 - ieeexplore.ieee.org
We review key properties for commercial ST-MRAM circuits, discuss the challenges to
achieving the many performance and scaling goals that are being addressed in current …
achieving the many performance and scaling goals that are being addressed in current …