Due to their high isolation, low insertion loss, high linearity, and low power consumption,
microelectromechanical systems (MEMS) switches have drawn much attention from …

This paper demonstrates a packaged THz shunt capacitor micro-electromechanical systems
(MEMS) switch with low insertion loss. In-line shunt switch is used to achieve a low loss in …

This letter presents a D-Band (110-170 GHz) RF-MEMS based Single-Pole Double-Throw
(SPDT) switch fabricated in a 0.13 μm SiGe BiCMOS technology. The on-wafer S-parameter …

In this work, an mm-wave/THz MEMS switch design process is presented. The challenges
and solutions associated with the switch electrical design, modeling, fabrication, and test are …

This paper presents a wafer level packaged (WLP) RF-MEMS switch fabricated in a 0.13 μm
SiGe BiCMOS process technology for D-Band (110–170 GHz) applications. For the wafer …

This paper presents a novel J band (220–325 GHz) MEMS switch design. The equivalent
circuits, the major parameters, capacitance, inductance and resistance in the circuit were …

In this work, an electromagnetic (EM) model and a small-signal (lumped-element) model of a
wafer-level encapsulated (WLE) radio frequency microelectromechanical systems (RF …

This paper presents a miniaturized microelectromechanical systems (MEMS) single-pole
four-throw (SP4T) switch which shows high performance in the wide terahertz band. The …

Austenitic stainless steels are extensively used in mechanical engineering. The machined
surface integrity has an essential influence on the stress corrosion cracking (SCC) …

In this letter, a pattern reconfigurable antenna with eight states is designed to realize the
multi-beam steering function in terahertz communication system. The proposed antenna …