Plasma enhanced cyclic chemical vapor deposition of silicon-containing films
H Thridandam, M Xiao, X Lei, TR Gaffney… - US Patent …, 2014 - Google Patents
The present invention is a process of plasma enhanced cyclic chemical vapor deposition of
silicon nitride, silicon carboni tride, silicon oxynitride, silicon carboxynitride, and carbon …
silicon nitride, silicon carboni tride, silicon oxynitride, silicon carboxynitride, and carbon …
Low temperature deposition of silicon-containing films
L Yang, X Lei, B Han, M Xiao, EJ Karwacki Jr… - US Patent …, 2012 - Google Patents
This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide,
carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films …
carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films …
[HTML][HTML] SiC/SiC ceramic matrix composites with BN interphase produced by gas phase routes: An overview
P Fenetaud, S Jacques - Open Ceramics, 2023 - Elsevier
The introduction of ceramic matrix composites (CMCs) into the hot sections of aircraft
engines offers significant weight and fuel efficiency gains. The result of decades of research …
engines offers significant weight and fuel efficiency gains. The result of decades of research …
Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
We studied the reactivity of different surface sites of β-Si3N4 with silicon chlorides during the
first half reaction of an atomic layer deposition (ALD) process using ab initio density …
first half reaction of an atomic layer deposition (ALD) process using ab initio density …
[PDF][PDF] Осаждение диэлектрических слоев из газовой фазы
ВЮ Васильев, СМ Репинский - Успехи химии, 2005 - researchgate.net
Слоистые композиции полупроводниковых, диэлектрических и металлических
материалов находят применение в прецизионных технологиях. На таких структурах …
материалов находят применение в прецизионных технологиях. На таких структурах …
[HTML][HTML] Enhancing silicon-nitride formation through ammonolysis of silanes with pseudo-halide substituents
AK Tummanapelli, Y Chen, MW Wong - Physical Chemistry Chemical …, 2024 - pubs.rsc.org
Considering the challenges in reactivity, potential contamination, and substrate selectivity,
the ammonolysis of traditional halosilanes in silicon nitride (SiN) thin film processing …
the ammonolysis of traditional halosilanes in silicon nitride (SiN) thin film processing …
Microstructure and properties of ultrathin amorphous silicon nitride protective coating
BK Yen, RL White, RJ Waltman, Q Dai… - Journal of Vacuum …, 2003 - pubs.aip.org
The effect of N content on the structure and properties of rf reactively sputtered amorphous
silicon nitride (a-SiN x) has been studied by Rutherford backscattering spectrometry, x-ray …
silicon nitride (a-SiN x) has been studied by Rutherford backscattering spectrometry, x-ray …
Silicon nitride chemical vapor deposition from dichlorosilane and ammonia: theoretical study of surface structures and reaction mechanism
AA Bagatur'yants, KP Novoselov, AA Safonov, JV Cole… - Surface Science, 2001 - Elsevier
The structure of a Si3N4 film and the mechanism of Si3N4 film growth along the [0001]
crystal direction during chemical vapor deposition have been examined using ab initio …
crystal direction during chemical vapor deposition have been examined using ab initio …
Ammonium chloride (–NH3+ Cl-) salt formation from dichlorosilane decomposition and its potential impact on silicon nitride atomic layer deposition
Plasma-enhanced atomic layer deposition (PEALD) has been demonstrated to be a
promising technique for controlled growth of silicon nitride (SiN x) thin films. Based on first …
promising technique for controlled growth of silicon nitride (SiN x) thin films. Based on first …
Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiNx: role of chlorine in plasma enhanced …
Abstract Silicon quantum dots (Si-QDs) embedded in an insulator matrix are important from
a technological and application point of view. Thus, being able to synthesize them in situ …
a technological and application point of view. Thus, being able to synthesize them in situ …