The present invention is a process of plasma enhanced cyclic chemical vapor deposition of
silicon nitride, silicon carboni tride, silicon oxynitride, silicon carboxynitride, and carbon …

This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide,
carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films …

The introduction of ceramic matrix composites (CMCs) into the hot sections of aircraft
engines offers significant weight and fuel efficiency gains. The result of decades of research …

We studied the reactivity of different surface sites of β-Si3N4 with silicon chlorides during the
first half reaction of an atomic layer deposition (ALD) process using ab initio density …

Слоистые композиции полупроводниковых, диэлектрических и металлических
материалов находят применение в прецизионных технологиях. На таких структурах …

Considering the challenges in reactivity, potential contamination, and substrate selectivity,
the ammonolysis of traditional halosilanes in silicon nitride (SiN) thin film processing …

The effect of N content on the structure and properties of rf reactively sputtered amorphous
silicon nitride (a-SiN x) has been studied by Rutherford backscattering spectrometry, x-ray …

The structure of a Si3N4 film and the mechanism of Si3N4 film growth along the [0001]
crystal direction during chemical vapor deposition have been examined using ab initio …

Plasma-enhanced atomic layer deposition (PEALD) has been demonstrated to be a
promising technique for controlled growth of silicon nitride (SiN x) thin films. Based on first …

Abstract Silicon quantum dots (Si-QDs) embedded in an insulator matrix are important from
a technological and application point of view. Thus, being able to synthesize them in situ …