Building programmable resistive devices in contact holes at the crossover of a plurality of
conductor lines in more than two vertical layers is disclosed. There are plurality of first …

FET technologies can be used as program selectors or One Time Programmable (OTP)
element in a programmable resis tive device. Such as interconnect fuse, contact/via fuse …

A method and system for multiple-bit programmable resistive cells having a multiple-bit
programmable resistive element and using diode as program selector are disclosed. The …

In-system repairing or configuring faulty memories after being used in a system. In one
embodiment, a memory chip can include at least one OTP memory to store defective …

Techniques, systems and circuitry for using One-Time Programmable (OTP) memories to
function as a Multiple-Time Programmable (MTP) memory. The OTP-for-MTP memory can …

A non-volatile data storage device comprises pairs of imme diately adjacent and isolated-
from-one-another local bit lines that are independently driven by respective and vertically …

A method and system for a programmable resistive memory to improve yield and reliability
has a plurality of programmable resistive units. Each programmable resistive unit can have …

A high density anti-fuse cell can be built at the cross points of two perpendicular interconnect
lines, such as active region lines, active and polysilicon lines, active and metal lines, or …

(*) Notice: Subject to any disclaimer, the term of this CN 14694.73. A 1, 2004 patent is
extended or adjusted under 35 CN 1691204. A 11, 2005 USC 154 (b) by 82 …

Junction diodes fabricated in standard CMOS logic processes can be used as program
selectors for reversible resistive devices, such as PCM, RRAM, CBRAM, or other memory …