Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide
semiconductors has grown. They offer high mobility, low off-current, low process …

The development of high-performance oxide-based transistors is critical to enable very large-
scale integration (VLSI) of monolithic 3-D integrated circuit (IC) in complementary metal …

Monoclinic semiconducting β-Ga2O3 has drawn attention, particularly because its thin film
could be achieved via mechanical exfoliation from bulk crystals, which is analogous to van …

ZnO-based thin film transistors (TFTs) with high bias stability are challenging due to the
intrinsic defects and overhigh interface trap density. In this work, we fabricated Hf-doped …

In this work, intermittent O 2 plasma treatment (IOPT) is demonstrated to optimize the
electrical performance of In 2 O 3-based thin-film transistors (TFTs) based on …

In this work, we demonstrate capacitorless dynamic random access memory (DRAM) and
complementary metal-oxide–semiconductor (CMOS) logic circuits by vertically stacked ZnO …

Solution-processed indium oxide (In 2 O 3) thin films have been studied widely as active
layers for transparent semiconducting devices because of their high charge carrier …

Two-dimensional (2D) zinc oxide (ZnO) has attracted much attention for its potential
applications in electronics, optoelectronics, ultraviolet photodetectors, and resistive sensors …

A new method is proposed to improve the stability performance of zinc oxide (ZnO) thin-film
transistors (TFTs) by reducing density of oxygen vacancies and enlarging valance band …

The impact of Ar or O 2 plasma treatment on the electrical characteristics of SnGaO thin film
transistors (TFTs) fabricated via solution method was examined. The findings of the study …