Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Deep-level traps in AlGaN/GaN-and AlInN/GaN-based HEMTs with different buffer doping technologies
Deep-level traps in AlGaN/GaNand AlInN/GaN-based HEMTs with different buffer doping
technologies are identified by drain current transient spectroscopy (DCTS) and low …
technologies are identified by drain current transient spectroscopy (DCTS) and low …
Gate leakage mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and its modeling
G Dutta, N DasGupta… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Gate leakage mechanisms in AlInN/GaN and AlGaN/GaN metal insulator semiconductor
high-electron-mobility transistors (MIS-HEMTs) with SiN x as gate dielectric have been …
high-electron-mobility transistors (MIS-HEMTs) with SiN x as gate dielectric have been …
Improving gate reliability of 6-in E-mode GaN-based MIS-HEMTs by employing mixed oxygen and fluorine plasma treatment
N Sun, H Huang, Z Sun, R Wang, S Li… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Robust and reliable gate scheme is crucial in developing the enhancement-mode (E-mode)
AlGaN/GaN metal–insulator–semiconductor (MIS)-high electron mobility transistors …
AlGaN/GaN metal–insulator–semiconductor (MIS)-high electron mobility transistors …
Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-inch Si Substrate Utilizing SiON/Al2O3 Stack Dielectrics
Z Sun, H Huang, R Wang, N Sun, P Tao… - IEEE Electron …, 2019 - ieeexplore.ieee.org
Enhancement-mode (E-mode) GaN-based MIS-HEMTs still suffer from undeniable gate
leakage or low gate breakdown voltage due to the low quality of gate dielectrics, resulting in …
leakage or low gate breakdown voltage due to the low quality of gate dielectrics, resulting in …
Effect of Sputtered-Al2O3 Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTs
G Dutta, N DasGupta… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
Dependence of threshold voltage (V Th) on oxide thickness (t ox) for GaN-based metal-
insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using sputter …
insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using sputter …
DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600° C in air
To the best of our knowledge, the 600 C device characteristics detailed here reflect the
highest operation temperature reported for AlGaN/GaN metal-insulator-semiconductor high …
highest operation temperature reported for AlGaN/GaN metal-insulator-semiconductor high …
Low-Temperature ICP-CVD SiNx as Gate Dielectric for GaN-Based MIS-HEMTs
G Dutta, N DasGupta… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
SiN x deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD)
technique at low temperature (70° C) was investigated as gate dielectric for AlGaN/GaN …
technique at low temperature (70° C) was investigated as gate dielectric for AlGaN/GaN …
A compact model of drain current for GaN HEMTs based on 2-DEG charge linearization
A physics-based simple and accurate compact model of drain current for GaN-based high
electron mobility transistors (HEMTs) is presented. The model is developed using analytical …
electron mobility transistors (HEMTs) is presented. The model is developed using analytical …
Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs
Y Li, Y Guo, K Zhang, X Zou, J Wang… - … on Electron Devices, 2017 - ieeexplore.ieee.org
AlGaN/GaN HEMTs with two kinds of p-type metal-oxide (CuO and NiOx) gates have been
fabricated, in which the threshold voltage can be modulated effectively. Especially, the …
fabricated, in which the threshold voltage can be modulated effectively. Especially, the …