Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis… - Advanced Electronic …, 2018 - Wiley Online Library
Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
Review of commercial GaN power devices and GaN-based converter design challenges
Gallium nitride (GaN) power devices are an emerging technology that have only recently
become available commercially. This new technology enables the design of converters at …
become available commercially. This new technology enables the design of converters at …
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
An overview of normally-off GaN-based high electron mobility transistors
Today, the introduction of wide band gap (WBG) semiconductors in power electronics has
become mandatory to improve the energy efficiency of devices and modules and to reduce …
become mandatory to improve the energy efficiency of devices and modules and to reduce …
Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Review of technology for normally-off HEMTs with p-GaN gate
Owing to the high carrier density and high electron mobility of the two dimensional electron
gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are …
gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are …
Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects
A large number of factors such as the increasingly stringent pollutant emission policies,
fossil fuel scarcity and their price volatility have increased the interest towards the partial or …
fossil fuel scarcity and their price volatility have increased the interest towards the partial or …
A review of gallium nitride power device and its applications in motor drive
X Ding, Y Zhou, J Cheng - CES Transactions on Electrical …, 2019 - ieeexplore.ieee.org
Wide band-gap gallium nitride (GaN) device has the advantages of large band-gap, high
electron mobility and low dielectric constant. Compared with traditional Si devices, these …
electron mobility and low dielectric constant. Compared with traditional Si devices, these …
The role of power device technology in the electric vehicle powertrain
In the automotive industry, the design and implementation of power converters and
especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely …
especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely …
Ultra-wide-bandgap AlGaN power electronic devices
RJ Kaplar, AA Allerman, AM Armstrong… - ECS Journal of Solid …, 2016 - iopscience.iop.org
Abstract" Ultra" wide-bandgap semiconductors are an emerging class of materials with
bandgaps greater than that of gallium nitride (EG> 3.4 eV) that may ultimately benefit a wide …
bandgaps greater than that of gallium nitride (EG> 3.4 eV) that may ultimately benefit a wide …