The effect of annealing on the microwave properties of thin films

W Chang, JS Horwitz, AC Carter, JM Pond… - Applied Physics …, 1999 - pubs.aip.org
Oriented, single phase thin films (∼ 5000 Å thick) of Ba 0.5 Sr 0.5 TiO 3 (BST) have been
deposited onto (100) MgO and (100) LaAlO 3 (LAO) substrates using pulsed laser …

Structure–property relationships in pure and acceptor-doped thin films for tunable microwave device applications

MW Cole, C Hubbard, E Ngo, M Ervin… - Journal of applied …, 2002 - pubs.aip.org
The influence of low concentration (1 mol%) Mg doping on the structural, microstructural,
surface morphological, and dielectric properties of Ba 1− x Sr x TiO 3 (BST) thin films has …

Dielectric characteristics of barium strontium titanate based metal insulator metal capacitor for dynamic random access memory cell

R Balachandran, BH Ong, HY Wong, KB Tan… - International Journal of …, 2012 - Elsevier
In this research work, the Metal-Insulator-Metal (MIM) capacitor structure is designed and
fabricated with barium strontium titanate (BST) oxide material as the capacitor dielectric …

A study of barium strontium titanate thin films for use in bypass capacitors

BA Baumert, LH Chang, AT Matsuda… - Journal of materials …, 1998 - cambridge.org
Physical and electrical characterization techniques have been applied to the problem of
developing a lower temperature process for spin-on Ba0. 7Sr0. 3TiO3 thin films and …

Crystallization kinetics of Ba0. 8Sr0. 2TiO3 sols and sol–gel synthesis of Ba0. 8Sr0. 2TiO3 thin films

D Bao, Z Wang, W Ren, L Zhang, X Yao - Ceramics International, 1999 - Elsevier
Chemically homogeneous Ba0. 8Sr0. 2TiO3 (BST) sols were synthesized using barium
acetate, strontium acetate, and titanium tetra-n-butoxide as starting materials. The …

Phase formation and dielectric properties of Ba0.5Sr0.5TiO3 by slow injection sol–gel technique

R Balachandran, HK Yow, BH Ong, KB Tan… - Journal of materials …, 2011 - Springer
A simple sol–gel process incorporating slow precursor injection technique was employed to
synthesize homogeneous Ba 0.5 Sr 0.5 TiO 3 nano powders. The Ba 0.5 Sr 0.5 TiO 3 …

Electrical characteristics of thin films for ultra-large-scale-integrated dynamic random access memory capacitors prepared by liquid-source misted chemical …

HJ Chung, SI Woo - Journal of Vacuum Science & Technology B …, 2001 - pubs.aip.org
For the first time, the physical and electrical properties of lead–strontium–titanate (PST) thin
films were prepared by liquid-source misted chemical deposition, and are reported. PST thin …

Structural, ultraviolet-shielding, dielectric and ferroelectric properties of Ba1− xSrxTiO3 (x= 0.35) thin films prepared by sol-gel method in presence of pyrrole

PK Sharma, GL Messing, DK Agrawal - Thin solid films, 2005 - Elsevier
Barium–strontium titanate thin films were prepared by the sol-gel (SG) method. The Barium–
strontium titanate sol was derived from organometallic compounds and modified by pyrrole …

Time dependent dielectric breakdown of paraelectric barium-strontium-titanate thin film capacitors for memory device applications

S Huang, H Chen, SC Wu, YM Lee - Journal of applied physics, 1998 - pubs.aip.org
Recently, there is a great interest in the application of ferroelectric and paraelectric thin film
capacitors for dynamic random access memory DRAM devices1, 2 and nonvolatile …

Synthesis and dielectric characteristic of Ba1− xSrxTiO3 thin films-based strontium-barium alkoxides derivatives

HY Tian, WG Luo, XH Pu, XY He, PS Qiu… - Materials Chemistry and …, 2001 - Elsevier
Homogeneous Ba1− xSrxTiO3 (BST) sols have been synthesized using barium, strontium
acetate, and titanium tetra-n-butoxide as starting materials. Acetic acid and ethylene glycol …