Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher efficiency,
higher power density, and smaller passive components resulting in lighter, smaller and more …

High‐frequency power converters with high switching frequency and compact layout are
characterised by high power density and high efficiency, which is superior to conventional …

This paper presents key building blocks of a monolithic GaN half-bridge solution: 1) a binary-
weighted digitally-controlled segmented gate-driver, offering slew-rate control; 2) a high …

This article develops a recurrent neural network (RNN) with an encoder–decoder structure
to predict the driving sequence of SiC MOSFET active gate drivers (AGDs). With a set of …

This article proposes a new optimization method and its platform for automatically adjusting
the control parameters of a digital active gate driver while operating a pulse-width …

For silicon carbide power mosfet s, high dv/dt in switching may bring about a high level of
electromagnetic interference. This letter shows that the dv/dt rate decreases at lower load …

The paper investigates the management of drain voltage and current slew rates (ie, dv/dt
and di/dt) of high-speed GaN-based power switches during the transitions. An active gate …

Targeting on gate ringing suppression in gallium nitride (GaN) dc-dc converter. This paper
presents a 10MHz switching frequency gate driver for GaN-based buck converter which …

This paper presents an AGD (active gate driver) implemented with a low voltage CMOS
technology to control the dv/dt sequence of low voltage (100V) and high voltage (650V) GaN …

The extended use of Gallium Nitride (GaN) transistors in power applications, such as
automotive, industrial and power distribution, leads practitioners and researchers to a review …