Towards engineering in memristors for emerging memory and neuromorphic computing: A review
Resistive random-access memory (RRAM), also known as memristors, having a very simple
device structure with two terminals, fulfill almost all of the fundamental requirements of …
device structure with two terminals, fulfill almost all of the fundamental requirements of …
Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film
Resistive Switching in oxides has offered new opportunities for developing resistive random
access memory (ReRAM) devices. Here we demonstrated bipolar Resistive Switching along …
access memory (ReRAM) devices. Here we demonstrated bipolar Resistive Switching along …
Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices
The resistive switching behavior of polycrystalline BiFeO 3 films was investigated, and the
coexistence of analog and digital resistive switching behaviors in a single Pt/BiFeO 3/Pt …
coexistence of analog and digital resistive switching behaviors in a single Pt/BiFeO 3/Pt …
Ferroelectric polarization induced memristive behavior in bismuth ferrite (BiFeO3) based memory devices
Abstract Bismuth ferrite (BiFeO 3, BFO) thin films of various thickness were deposited using
spray pyrolysis technique at 673 K. The structural studies of the prepared BFO thin films …
spray pyrolysis technique at 673 K. The structural studies of the prepared BFO thin films …
Multifunctional BiFeO3 Thin Film-Based Memristor Device as an Efficient Synapse: Potential for Beyond von Neumann Computing in Neuromorphic Systems
We report the potential of low-cost sol–gel-synthesized phase pure BiFeO3 thin films as an
active material with Cu as the top contact and fluorine-doped tin oxide (FTO) as the bottom …
active material with Cu as the top contact and fluorine-doped tin oxide (FTO) as the bottom …
[HTML][HTML] Interfacial layer assisted, forming free, and reliable bipolar resistive switching in solution processed BiFeO3 thin films
BiFeO 3 based resistive random access memory (RRAM) devices are fabricated using a low-
cost solution process to study the effect of an Al top electrode on switching behavior and …
cost solution process to study the effect of an Al top electrode on switching behavior and …
Effects of magnetic field on resistive switching in multiferroic based Ag/BiFeO3/FTO RRAM device
We report the effects of the magnetic field on resistive switching behavior in the Ag/BiFeO
3/FTO RRAM device through conventional I–V characteristics. The switching of the device …
3/FTO RRAM device through conventional I–V characteristics. The switching of the device …
Impact of laser energy on resistive switching properties of BiFeO3 thin films
S Lamichhane, S Sharma, M Tomar… - Materials Chemistry and …, 2023 - Elsevier
In this report, BFO thin film samples were deposited using Pulsed Laser Deposition (PLD)
technique by altering the PLD laser energy from 150 to 250 mJ, to study the role of laser …
technique by altering the PLD laser energy from 150 to 250 mJ, to study the role of laser …
Review of mechanisms proposed for redox based resistive switching structures
I Riess - Journal of Electroceramics, 2017 - Springer
Mechanisms proposed for redox-based memristors are reviewed. Emphasis is given on MIM
(metal/insulator/metal) devices of the type MOM where the insulator is an oxide. The oxide …
(metal/insulator/metal) devices of the type MOM where the insulator is an oxide. The oxide …
Modulation of oxygen vacancies assisted ferroelectric and photovoltaic properties of (Nd, V) co-doped BiFeO3 thin films
We are reporting on the improved ferroelectric and photovoltaic properties of (Nd 3+, V 5+)
co-doped (Bi 0.95 Nd 0.05)(Fe 1− x V x) O 3 (BNFVO)(x= 0.01, 0.03) thin films grown by …
co-doped (Bi 0.95 Nd 0.05)(Fe 1− x V x) O 3 (BNFVO)(x= 0.01, 0.03) thin films grown by …