Following their first observation in 1984, random telegraph signals (RTSs) were initially a
purely scientific tool to study fundamental aspects of defects in semiconductor devices. As …

Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has
been identified as the main source of noise at low frequency. It often originates from an …

Detection and use of physical noise fluctuations in a signal provides significant advantages
in the development of bio-and neuro-sensing and functional mimicking devices. Low …

Random telegraph signals corresponding to activated charge traps were observed with
liquid-gated CNT FETs. The high signal-to-noise ratio that we observe demonstrates that …

At present, we observe a long-lasting process of miniaturization of electronic devices. The
ultimate limit for the miniaturization of electronic components is set by the atomic scale …

Transistor biosensors are mass-fabrication-compatible devices of interest for point of care
diagnosis as well as molecular interaction studies. While the actual transistor gates in …

We propose a novel method for characterizing the oxide traps that participate in random
telegraph noise (RTN) by using charging history effects on the traps. In this method, the …

This section presents brief description of peculiarities of carbon materials and advantages of
noise spectsroscopy for the study of unique carbon nanotubes (CNT) materials and devices …

Molecular electronics is a fascinating area of research with the ability to tune device
properties by a chemical tailoring of organic molecules. However, molecular electronics …

We report on the influence of low gamma irradiation (10 4 Gy) on the noise properties of
individual carbon nanotube (CNT) field-effect transistors (FETs) with different gate …