Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local …
Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the
realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this …
realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this …
Determination of an acceptor level in bulk GaN grown by high nitrogen pressure solution method
A point defect in acceptor‐doped bulk free standing GaN grown by the high nitrogen
pressure solution method (HNPS) was investigated using electron paramagnetic resonance …
pressure solution method (HNPS) was investigated using electron paramagnetic resonance …
[HTML][HTML] Improving p-type doping efficiency in Al0. 83Ga0. 17N alloy substituted by nanoscale (AlN) 5/(GaN) 1 superlattice with MgGa-ON δ-codoping: Role of O-atom …
We calculate Mg-acceptor activation energy EA and investigate the influence of O-atom,
occupied the Mg nearest-neighbor, on EA in nanoscale (AlN) 5/(GaN) 1 superlattice (SL), a …
occupied the Mg nearest-neighbor, on EA in nanoscale (AlN) 5/(GaN) 1 superlattice (SL), a …
Influence of Mg doping on In adsorption and In incorporation in (In, Ga) N superlattices
We present a detailed investigation of the mechanisms at play for the incorporation of In and
Mg on the GaN (0001) surface during plasma-assisted molecular beam epitaxy. First, we …
Mg on the GaN (0001) surface during plasma-assisted molecular beam epitaxy. First, we …