Hyperdoping silicon, which introduces deep-level dopants into Si at concentrations near one
atomic percent, drastically changes its optoelectronic properties. We review recent progress …

Hyperdoping that introduces impurities with concentrations exceeding their equilibrium
solubility has been attracting great interest since the tuning of semiconductor properties …

Silicon, as one of the most essential semiconducting materials, is widely applied in various
photodetection applications due to its high portability, convenient preparation, and …

Developing a low-cost, room-temperature operated and complementary metal-oxide-
semiconductor (CMOS) compatible near infrared silicon photodetector is of interest for …

Strong sub-bandgap absorption of hyperdoped silicon caused by an impurity deep band has
attracted a lot of interest in recent years, which is promising for photodetector application …

Infrared photodetectors based on crystalline silicon have attracted much attention due to
their low cost and good compatibility with complementary metal–oxide–semiconductor …

Silicon, as the earth-abundant semiconductor, has low cost and good compatibility with
mature complementary metal-oxide-semiconductor technology. Therefore, instead of …

Pulsed laser hyperdoping is widely investigated as an effective method for expanding the
infrared absorption of silicon. Prior to further device fabrication, thermal treatment is …

Surface-structured engineering of hyperdoped silicon can effectively facilitate the absorption
of sub-bandgap photons in pristine single-crystal silicon (sc-Si). Here, we conducted …

Thermal annealing has been widely used in the fabrication of microelectronic devices.
However, the sub-bandgap infrared (wavelength λ= 1100–2500 nm) absorption of deep …