Germanium based field-effect transistors: Challenges and opportunities
The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …
Effective electrical passivation of Ge (100) for high-k gate dielectric layers using germanium oxide
In search of a proper passivation for high-k Ge metal-oxide-semiconductor devices, the
authors have deposited high-k dielectric layers on Ge O 2, grown at 350–450 C in O 2. Zr …
authors have deposited high-k dielectric layers on Ge O 2, grown at 350–450 C in O 2. Zr …
Nanocrystals for silicon-based light-emitting and memory devices
Nanocrystals (NCs), representing a zero-dimensional system, are an ideal platform for
exploring quantum phenomena on the nanoscale, and are expected to play a major role in …
exploring quantum phenomena on the nanoscale, and are expected to play a major role in …
Elevated transition temperature in Ge doped VO2 thin films
Thermochromic Ge x V 1− x O 2+ y thin films have been deposited on Si (100) substrates by
means of reactive magnetron sputtering. The films were then characterized by Rutherford …
means of reactive magnetron sputtering. The films were then characterized by Rutherford …
[HTML][HTML] Mechanisms of boron diffusion in silicon and germanium
S Mirabella, D De Salvador, E Napolitani… - Journal of Applied …, 2013 - pubs.aip.org
B migration in Si and Ge matrices raised a vast attention because of its influence on the
production of confined, highly p-doped regions, as required by the miniaturization trend. In …
production of confined, highly p-doped regions, as required by the miniaturization trend. In …
Electrical properties of La2O3 and HfO2∕ La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices
Germanium metal-insulator-semiconductor capacitors with La 2 O 3 dielectrics deposited at
high temperature or subjected to post deposition annealing show good electrical …
high temperature or subjected to post deposition annealing show good electrical …
Surface defects and passivation of Ge and III–V interfaces
M Houssa, E Chagarov, A Kummel - Mrs Bulletin, 2009 - cambridge.org
The need for high-κ gate dielectrics and metal gates in advanced integrated circuits has
reopened the door to Ge and III–V compounds as potential replacements for silicon …
reopened the door to Ge and III–V compounds as potential replacements for silicon …
Gate dielectric formation and MIS interface characterization on Ge
Appropriate Ge surface control and resulting formation of Ge MIS interfaces with superior
interface properties are one of the most critical issues in realizing high performance Ge …
interface properties are one of the most critical issues in realizing high performance Ge …
Graphene grown on Ge (0 0 1) from atomic source
Among the many anticipated applications of graphene, some–such as transistors for Si
microelectronics–would greatly benefit from the possibility to deposit graphene directly on a …
microelectronics–would greatly benefit from the possibility to deposit graphene directly on a …