Ultrawide-bandgap semiconductors: An overview
Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …
renaissance exemplified by advances in material-level understanding, extensions of known …
A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors
W Nunn, TK Truttmann, B Jalan - Journal of materials research, 2021 - Springer
Much progress has been made in the area of wide bandgap semiconductors for applications
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …
Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide
Deep UV transparent thin films have recently attracted considerable attention owing to their
potential in UV and organic-based optoelectronics. Here, we report the achievement of a …
potential in UV and organic-based optoelectronics. Here, we report the achievement of a …
Significant Suppression of Cracks in Freestanding Perovskite Oxide Flexible Sheets Using a Capping Oxide Layer
Flexible and functional perovskite oxide sheets with high orientation and crystallization are
the next step in the development of next-generation devices. One promising synthesis …
the next step in the development of next-generation devices. One promising synthesis …
Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design
Exploration and advancements in ultrawide bandgap (UWBG) semiconductors are pivotal
for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics …
for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics …
[HTML][HTML] Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ= 2323 S cm− 1
Conductive homoepitaxial Si-doped β-Ga 2 O 3 films were fabricated by pulsed laser
deposition with an as-deposited 2323 S cm− 1 conductivity (resistivity= 4.3× 10− 4 Ω-cm …
deposition with an as-deposited 2323 S cm− 1 conductivity (resistivity= 4.3× 10− 4 Ω-cm …
Deep Ultraviolet Transparent Electrode: Ta-Doped Rutile Sn1–xGexO2
Y Nagashima, M Fukumoto, M Tsuchii… - Chemistry of …, 2022 - ACS Publications
Transparent conductive oxides (TCOs) are key materials for highly efficient optoelectronic
devices such as light-emitting diodes (LEDs) and photovoltaic cells. While high-performance …
devices such as light-emitting diodes (LEDs) and photovoltaic cells. While high-performance …
Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO3
The discovery and development of ultra-wide bandgap (UWBG) semiconductors is crucial to
accelerate the adoption of renewable power sources. This necessitates an UWBG …
accelerate the adoption of renewable power sources. This necessitates an UWBG …
Strontium stannate as an alternative anode material for Li-ion batteries
Although strontium stannate (SrSnO3) has been considered as an anode for Li-ion batteries,
a deep understanding of its Li-ion transport properties remains lacking. In this work, the …
a deep understanding of its Li-ion transport properties remains lacking. In this work, the …
Thin film transistors based on ultra-wide bandgap spinel ZnGa2O4
We report on thin film transistors (TFTs) based on spinel ZnGa 2 O 4 (ZGO) that was recently
spotlighted as an ultra-wide bandgap oxide semiconductor. The ZGO layers were grown in a …
spotlighted as an ultra-wide bandgap oxide semiconductor. The ZGO layers were grown in a …