True‐Red InGaN Light‐Emitting Diodes for Display Applications
R Armitage, Z Ren, M Holmes… - physica status solidi …, 2024 - Wiley Online Library
Red InGaN has attracted much attention recently for micro‐light‐emitting diode (microLED)
display applications. However, the consequences of spectral broadening are often …
display applications. However, the consequences of spectral broadening are often …
[HTML][HTML] Recent advances in micro-pixel light emitting diode technology
Display technology has developed rapidly in recent years, with III–V system-based micro-
light-emitting diodes (μLEDs) attracting attention as a means to overcome the physical …
light-emitting diodes (μLEDs) attracting attention as a means to overcome the physical …
Unlocking the origin of compositional fluctuations in InGaN light emitting diodes
The accurate determination of compositional fluctuations is pivotal in understanding their
role in the reduction of efficiency in high indium content In x Ga 1–x N light emitting diodes …
role in the reduction of efficiency in high indium content In x Ga 1–x N light emitting diodes …
InGaN-based blue and red micro-LEDs: Impact of carrier localization
JH Park, M Pristovsek, DP Han, B Kim, SM Lee… - Applied Physics …, 2024 - pubs.aip.org
Herein, we investigate micro-light-emitting diodes (μLEDs) ranging in size from 160× 160 to
10× 10 μm 2 and report that the differences in the behavior of InGaN-based blue (∼ 460 nm) …
10× 10 μm 2 and report that the differences in the behavior of InGaN-based blue (∼ 460 nm) …
Enhancing light-matter coupling with electric fields in polar semiconductors
N Pant, R Armitage, E Kioupakis - arXiv preprint arXiv:2410.23591, 2024 - arxiv.org
We revisit the prevailing notion that spontaneous and piezoelectric polarization fields are
inherently detrimental to light emission in polar semiconductor heterostructures. Here, we …
inherently detrimental to light emission in polar semiconductor heterostructures. Here, we …
Optimization of Violet Emitting Quantum Wells with Insertion of AlGaN Layers and Temperature Ramp-up
High-power InGaN-based violet laser diodes (LDs) have received great attention for their
applications such as long-haul illuminations and material processing. 1 In order to achieve …
applications such as long-haul illuminations and material processing. 1 In order to achieve …