Due to the broad potential applications range in both military and civilian domains, solar-
blind photodetectors based on the ultrawide-bandgap semiconductor Ga 2 O 3, with high …

Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …

Ga 2 O 3 based self-powered photodetectors, which can work in photovoltaic mode, show
great potential applications in the next-generation photodetectors. Due to the difficulty of p …

There is an emerging need for high-sensitivity solar-blind deep ultraviolet (DUV)
photodetectors with an ultra-fast response speed. Although nanoscale devices based on Ga …

Solar blind photodetectors with a cutoff wavelength within the 200–280 nm region is
attracting much attention due to their potential civilian and military applications. The …

Simultaneous implementation of photodetector and neuromorphic vision sensor (NVS) on a
single device faces a great challenge, due to the inherent speed discrepancy in their …

In this article, we report on high-performance deep ultraviolet photodetectors (DUV PDs)
fabricated on metal–organic chemical vapor deposition (MOCVD)-grown β-Ga2O3 …

Solar-blind photodetection systems, which can convert solar-blind deep ultraviolet light into
an electrical signal, have been designed for practical use owing to their high sensitivity and …

Photodetectors (PDs) for weak light signal detection have wide applications for optical
communication and imaging. Antimony sulfide (Sb2S3) as a nontoxic and stable light …

Ferroelectric (FE) materials are thought to be promising materials for self-powered ultraviolet
(UV) photodetector applications because of their photovoltaic effects. However, FE-based …