Silicon porosification: state of the art

G Korotcenkov, BK Cho - Critical Reviews in Solid State and …, 2010 - Taylor & Francis
This review is devoted to the analysis of the problems related to fabrication of the Si porous
layers. The review was motivated by a great interest to Si-based porous materials from nano …

Porous silicon nanoparticles as scavengers of hazardous viruses

LA Osminkina, VY Timoshenko, IP Shilovsky… - Journal of nanoparticle …, 2014 - Springer
We report that silicon nanoparticles (SiNPs) with typical sizes from 5 to 50 nm prepared by
grinding of porous silicon can act as efficient scavengers of human immunodeficiency virus …

[图书][B] Handbook of Humidity Measurement, Volume 3: Sensing Materials and Technologies

G Korotcenkov - 2020 - taylorfrancis.com
Because of unique water properties, humidity affects materials and many living organisms,
including humans. Humidity control is important in various fields, from production …

Composite porous silicon-crystalline silicon cantilevers for enhanced biosensing

S Stolyarova, S Cherian, R Raiteri, J Zeravik… - Sensors and Actuators B …, 2008 - Elsevier
Cantilever transducers, which are recognized as a promising platform for the next
generation of chemical and biological sensors, are currently under extensive research. Here …

Fabrication and characterization of porous silicon layers for applications in optoelectronics

RS Dubey, DK Gautam - Optical and quantum electronics, 2009 - Springer
In the present paper, several samples of porous silicon monolayers and multilayers were
prepared at different anodization conditions with fixed HF concentration. The room …

Synthesis of ammonium silicon fluoride cryptocrystals on silicon by dry etching

S Kalem - Applied surface science, 2004 - Elsevier
Cryptocrystal layers of ammonium silicon fluoride (NH4) 2SiF6 were synthesized on silicon
wafers by dry etching method using vapor of the mixture of HF and HNO3 solutions at room …

Electromagnetic excitation of nano-carbon in vacuum

S Wang, L Hu, B Zhang, D Zhao, Z Wei, Z Zhang - Optics Express, 2005 - opg.optica.org
Nano-carbon as lighting source is demonstrated in this paper. The characterized nano-
radiation from nano-carbon, excited by different lasers in vacuum, is observed when laser …

Near-IR photoluminescence from Si/Ge nanowire-grown silicon wafers: effect of HF treatment

S Kalem, P Werner, V Talalaev - Applied Physics A, 2013 - Springer
We present the room-temperature near-infrared (NIR) photoluminescence (PL) properties of
Si/Ge nanowire (NW)-grown silicon wafers which were treated by vapor of HF: HNO 3 …

Manufacturing method for n-type porous silicon based on Hall effect without illumination

JC Lin, PW Lee, WC Tsai - Applied physics letters, 2006 - pubs.aip.org
A method for the fabrication of n-type porous silicon (n‐PS) is developed. The Hall effect is
applied in the fabrication process. The majority carriers in n-type Si (electrons) are swept …

A new method for luminescent porous silicon formation: reaction‐induced vapor‐phase stain etch

EA de Vasconcelos, EF da Silva Jr… - … status solidi (a), 2005 - Wiley Online Library
We report a new method to form reproducible luminescent porous silicon layers in p‐type
and n‐type substrates of low and high resisivity, with minimum apparatus and maximum …