The ability to tailor compound semiconductors and to integrate them onto foreign substrates
can lead to superior or novel functionalities with a potential impact on various areas in …

Hydrogen and/or helium implantation-induced surface blistering and layer splitting in
compound semiconductors such as InP, GaAs, GaN, AlN, and ZnO are discussed. The …

Conclusion The defects and their thermo-evolution in the hetero-integrated GaN films on Si
(100) substrate were thoroughly studied. The nano-cavity defects and residual H ions in the …

Heterogeneous integration of gallium nitride (GaN) film on complementary metal-oxide-
semiconductor (CMOS)-compatible Si (100) substrate provides a material platform for future …

The evolution of power and radiofrequency electronics enters a new era with (ultra) wide
bandgap semiconductors such as GaN, SiC, and β-Ga 2 O 3, driving significant …

Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible
Si (100) substrate using the ion-cutting technique has been demonstrated. The …

The implantation damage build-up and optical properties of GaN epitaxial films under $\text
{H} _ {2}^{+} $ ion implantation have been investigated by a combination of Rutherford …

Developing bulk materials into thin-films not only enables multiple physical fields to interact
strongly within a smaller volume but also enhances the stability, scalability, and integrability …

Heterogeneous integration of materials pave a new way for the development of the
microsystem with miniaturization and complex functionalities. Two types of hybrid silicon on …

Bulk or freestanding GaN is a key material in various devices other than the blue laser
diodes. However, the high cost of bulk GaN wafers severely limits the large scale …