Robust and Area Efficient 4H-SiC 1.2 and 3.3 kV Floating Field Ring (FFR) and Trench-FFR...

Design and Optimization of 3.3 kV Silicon Carbide Semi-Superjunction Schottky Power Devices

K Melnyk, AB Renz, Q Cao… - … Devices and ICs …, 2024 - ieeexplore.ieee.org
Silicon carbide (SiC) based power devices are highly competitive and widely used,
especially in the electric vehicle (EV) market. Beyond the “conventional” 650–1700 V …
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3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance

K Melnyk, AB Renz, Q Cao… - … on Electron Devices, 2024 - ieeexplore.ieee.org
This study describes the design and optimization of a 3.3 kV silicon carbide (SiC) semi-
superjunction (semi-SJ) Schottky barrier diode (SBD). The proposed structure features am …
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