Advanced Data Encryption using 2D Materials
Advanced data encryption requires the use of true random number generators (TRNGs) to
produce unpredictable sequences of bits. TRNG circuits with high degree of randomness …
produce unpredictable sequences of bits. TRNG circuits with high degree of randomness …
PCMO RRAM for integrate-and-fire neuron in spiking neural networks
S Lashkare, S Chouhan, T Chavan… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Resistance random access memories (RRAM) or memristors with an analog change of
conductance are widely explored as an artificial synapse, eg, Pr 0.7 Ca 0.3 MnO 3 (PCMO) …
conductance are widely explored as an artificial synapse, eg, Pr 0.7 Ca 0.3 MnO 3 (PCMO) …
Arbitrary spike time dependent plasticity (STDP) in memristor by analog waveform engineering
N Panwar, B Rajendran… - IEEE Electron Device …, 2017 - ieeexplore.ieee.org
In the literature, various pulse-based programming schemes have been used to mimic
typical spike time-dependent plasticity (STDP)-based learning rule observed in biological …
typical spike time-dependent plasticity (STDP)-based learning rule observed in biological …
PCMO-based RRAM and NPN bipolar selector as synapse for energy efficient STDP
S Lashkare, N Panwar, P Kumbhare… - IEEE Electron …, 2017 - ieeexplore.ieee.org
Resistance random access memories (RRAMs) are widely explored to show spike time
dependent plasticity (STDP) as a learning rule to show biological synaptic behavior, as …
dependent plasticity (STDP) as a learning rule to show biological synaptic behavior, as …
Robust non-volatile bipolar resistive switching in sol-gel derived BiFeO3 thin films
BiFeO 3 thin films are deposited on FTO coated glass substrates using a simple sol-gel
process, limiting thickness about 70 nm and Ag/BiFeO 3/FTO RRAM devices are prepared …
process, limiting thickness about 70 nm and Ag/BiFeO 3/FTO RRAM devices are prepared …
Memory Performance of a Simple Pr0.7Ca0.3MnO3-Based Selectorless RRAM
P Kumbhare, I Chakraborty, A Khanna… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Enhancement of nonlinearity (NL) in low-resistance state (LRS) currents of resistance
random access memory (RRAM) devices is a key challenge for the selectorless RRAM …
random access memory (RRAM) devices is a key challenge for the selectorless RRAM …
Resistive switching and synaptic behavior of perovskite lanthanum orthoferrite thin film for neuromorphic computing
A resistance random access memory (RRAM), based on a metal oxide thin film with resistive
switching behavior, has been explored as an emerging candidate for their application as …
switching behavior, has been explored as an emerging candidate for their application as …
Understanding the Region of Resistance Change in Pr0.7Ca0.3MnO3 RRAM
Pr1–x Ca x MnO3 (PCMO)-based resistance random access memory (RRAM) is attractive in
large-scale memory and neuromorphic applications as it is nonfilamentary and area …
large-scale memory and neuromorphic applications as it is nonfilamentary and area …
Transient joule heating-based oscillator neuron for neuromorphic computing
S Lashkare, P Kumbhare, V Saraswat… - IEEE Electron Device …, 2018 - ieeexplore.ieee.org
Oscillatory neural networks (ONNs), based on the thalamocortical neural system, use the
phase dynamics of oscillator neurons to solve NP-hard problems-a key challenge for von …
phase dynamics of oscillator neurons to solve NP-hard problems-a key challenge for von …
Reaction-Drift Model for Switching Transients in Pr₀. ₇Ca₀. ₃MnO₃-Based Resistive RAM
V Saraswat, S Prasad, A Khanna… - … on Electron Devices, 2020 - ieeexplore.ieee.org
Pr0. 7Ca0. 3MnO3 (PCMO)-based resistive RAM (RRAM) shows promising memory
properties like nonvolatility, low variability, multiple resistance states, and scalability. From a …
properties like nonvolatility, low variability, multiple resistance states, and scalability. From a …