Probing Boron Vacancy Complexes in h-BN Semi-Bulk Crystals Synthesized by Hydride Vapor Phase Epitaxy

Z Alemoush, A Tingsuwatit, J Li, J Lin, H Jiang - Crystals, 2023 - mdpi.com
Hexagonal BN (h-BN) has emerged as an important ultrawide bandgap (UWBG)
semiconductor (Eg~ 6 eV). The crystal growth technologies for producing semi-bulk …

Electronic and optical properties of the PtSe2/boron phosphide van der Waals heterostructure

X Zhao, W Wang, M Pei, C Xia, T Wang, X Dai… - Physica B: Condensed …, 2023 - Elsevier
Based on the first-principles calculations, we investigate electronic and optical properties of
PtSe 2/boron phosphide (BP) van der Waals heterostructure (vdWH). The PtSe 2/BP …

Probing and controlling oxygen impurity diffusion in h-BN semi-bulk crystals

M Almohammad, A Tingsuwatit, Z Alemoush… - Applied Physics …, 2023 - pubs.aip.org
Combining its unique features of ultrawide bandgap (UWBG) and two-dimensional nature, h-
BN has been explored for emerging applications such as deep ultraviolet optoelectronic …

Probing the bandgap and effects of t-BN domains in h-BN neutron detectors

A Tingsuwatit, J Li, J Lin, H Jiang - Applied Physics Express, 2022 - iopscience.iop.org
Thermal neutron detectors in a lateral scheme were fabricated from a 70 μm thick
freestanding B-10 enriched hexagonal BN (h-10 BN). Two sets of channel peaks …

Probing room temperature indirect and minimum direct band gaps of h-BN

NK Hossain, A Tingsuwatit, Z Alemoush… - Applied Physics …, 2024 - iopscience.iop.org
Hexagonal boron nitride (h-BN) has attracted considerable interest as an ultrawide bandgap
(UWBG) semiconductor. Experimental studies focused on the detailed near band-edge …

Ultimate sharpness of the tunneling resonance in vertical heterostructures

G Alymov, D Svintsov - arXiv preprint arXiv:2310.07307, 2023 - arxiv.org
Heterostructures comprised of two two-dimensional electron systems (2DES) separated by a
dielectric exhibit resonant tunneling when the band structures of both systems are aligned. It …