An axiomatic approach to image interpolation
We discuss possible algorithms for interpolating data given in a set of curves and/or points in
the plane. We propose a set of basic assumptions to be satisfied by the interpolation …
the plane. We propose a set of basic assumptions to be satisfied by the interpolation …
An improved small-signal parameter-extraction algorithm for GaN HEMT devices
RG Brady, CH Oxley, TJ Brazil - IEEE Transactions on …, 2008 - ieeexplore.ieee.org
A highly efficient and accurate extraction algorithm for the small-signal equivalent-circuit
parameters of a GaN high electron-mobility transistor device is presented. Elements of the …
parameters of a GaN high electron-mobility transistor device is presented. Elements of the …
GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications
S Samanta - Journal of Semiconductors, 2023 - iopscience.iop.org
This review article discusses the development of gallium arsenide (GaAs)-based resonant
tunneling diodes (RTD) since the 1970s. To the best of my knowledge, this article is the first …
tunneling diodes (RTD) since the 1970s. To the best of my knowledge, this article is the first …
Recent developments and future perspectives on energy storage and conversion applications of nickel molybdates
Transition metal oxides with two different cations in the same crystal structure are
considered to perform better as catalysts due to the synergistic effects causing better charge …
considered to perform better as catalysts due to the synergistic effects causing better charge …
Growth and Simultaneous Valleys Manipulation of Two-Dimensional MoSe2-WSe2 Lateral Heterostructure
The covalently bonded in-plane heterostructure (HS) of monolayer transition-metal
dichalcogenides (TMDCs) possesses huge potential for high-speed electronic devices in …
dichalcogenides (TMDCs) possesses huge potential for high-speed electronic devices in …
Continuous wave terahertz generation from ultra-fast InP-based photodiodes
E Rouvalis, CC Renaud, DG Moodie… - … on microwave theory …, 2012 - ieeexplore.ieee.org
We present theoretical analysis and experimental results for an optimized Traveling Wave
Uni-Traveling Carrier Photodiode for continuous wave millimeter-wave and Terahertz …
Uni-Traveling Carrier Photodiode for continuous wave millimeter-wave and Terahertz …
[图书][B] Understanding modern transistors and diodes
DL Pulfrey - 2010 - books.google.com
Written in a concise, easy-to-read style, this text for senior undergraduate and graduate
courses covers all key topics thoroughly. It is also a useful self-study guide for practising …
courses covers all key topics thoroughly. It is also a useful self-study guide for practising …
Design and Analysis of InP/InAs/AlGaAs Based Cylindrical Surrounding Double-Gate (CSDG) MOSFETs With La2O3 for 5-nm Technology
P Paramasivam, N Gowthaman, VM Srivastava - IEEE Access, 2021 - ieeexplore.ieee.org
The structural improvement and rapid production of InP, InAs (III-V, binary), and AlGaAs (III-
V, ternary) compound semiconductor materials have invariably enabled its utilization in …
V, ternary) compound semiconductor materials have invariably enabled its utilization in …
[图书][B] Strain-engineered mosfets
CK Maiti, TK Maiti - 2012 - library.oapen.org
This book brings together new developments in the area of strain-engineered MOSFETs
using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V …
using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V …
Artificial neural network model of SOS-MOSFETs based on dynamic large-signal measurements
Y Ko, P Roblin, A Zarate-De Landa… - IEEE Transactions …, 2014 - ieeexplore.ieee.org
A measurement-based quasi-static nonlinear field-effect transistor (FET) model relying on an
artificial neural network (ANN) approach and using real-time active load-pull (RTALP) …
artificial neural network (ANN) approach and using real-time active load-pull (RTALP) …