[PDF][PDF] Imaging with mass spectrometry
ML Pacholski, N Winograd - Chemical reviews, 1999 - academia.edu
Imaging mass spectrometry (MS) has created new fundamental research opportunities in
many fields because of its unique ability to acquire molecule-and element-specific pictures …
many fields because of its unique ability to acquire molecule-and element-specific pictures …
[图书][B] Principles and practice of variable pressure/environmental scanning electron microscopy (VP-ESEM)
D Stokes - 2008 - books.google.com
Offers a simple starting point to VPSEM, especially for new users, technicians and students
containing clear, concise explanations Crucially, the principles and applications outlined in …
containing clear, concise explanations Crucially, the principles and applications outlined in …
Secondary electron contrast in low-vacuum∕ environmental scanning electron microscopy of dielectrics
Low vacuum scanning electron microscopy (SEM) is a high-resolution technique, with the
ability to obtain secondary electron images of uncoated, nonconductive specimens. This feat …
ability to obtain secondary electron images of uncoated, nonconductive specimens. This feat …
Multivariate analysis of TOF-SIMS spectra from dodecanethiol SAM assembly on gold: Spectral interpretation and TOF-SIMS fragmentation processes
Time-of-flight secondary ion mass spectrometry (TOF-SIMS) negative and positive spectral
fragmentation patterns acquired from a series of samples taken at various times during the …
fragmentation patterns acquired from a series of samples taken at various times during the …
Contributions of the environmental scanning electron microscope and X-ray diffraction in investigating the structural evolution of a SiO2 aggregate attacked by alkali …
J Verstraete, L Khouchaf, MH Tuilier - Journal of materials science, 2004 - Springer
The structural changes of a flint aggregate attacked by alkali-silica reaction (ASR) were
investigated using an environmental scanning electron microscope (ESEM) equipped with a …
investigated using an environmental scanning electron microscope (ESEM) equipped with a …
Direct measurement of electron beam scattering in the environmental scanning electron microscope using phosphor imaging plates
SA Wight, CJ Zeissler - Scanning, 2000 - Wiley Online Library
Phosphor imaging plate technology has made it possible to directly image the distribution of
primary beam electrons and scattered electrons in the environmental scanning electron …
primary beam electrons and scattered electrons in the environmental scanning electron …
[图书][B] Multivariate analysis of TOF-SIMS spectra from self-assembled monolayers
DJ Graham - 2001 - search.proquest.com
Recently the concept of engineered biomaterial surfaces has started a revolution in the
biomaterials community. These biomaterial surfaces are designed using knowledge from …
biomaterials community. These biomaterial surfaces are designed using knowledge from …
Gaseous secondary electron detection and cascade amplification in the environmental scanning electron microscope
SW Morgan - 2005 - opus.lib.uts.edu.au
This thesis quantitatively investigates gaseous electron-ion recombination in an
environmental scanning electron microscope (ESEM) at a transient level by utilizing the dark …
environmental scanning electron microscope (ESEM) at a transient level by utilizing the dark …
A Study of the Electron Beam Scattering Under Various Gaseous Environment
J He - 2003 - trace.tennessee.edu
There are three objectives in this work: to experimentally measure the profiles of electron
beams scattered by interaction with a gas, to measure total scattering cross-sections for …
beams scattered by interaction with a gas, to measure total scattering cross-sections for …
Symposium 11: Secondary ion mass spectrometry
SJ Bennett - Microbeam Analysis, 2000 - taylorfrancis.com
The next generation, state-of-the-art, Si-based, microelectronic devices (critical feature
dimensions approaching 0.18 nm) will utilize sub-keV dopant implants and gate dielectrics< …
dimensions approaching 0.18 nm) will utilize sub-keV dopant implants and gate dielectrics< …