Passivation of III–V surfaces with crystalline oxidation
P Laukkanen, MPJ Punkkinen, M Kuzmin… - Applied Physics …, 2021 - pubs.aip.org
Control of interfacial physicochemical properties associated with device materials to
minimize the impact of point defects on device performance has been a dominant theme in …
minimize the impact of point defects on device performance has been a dominant theme in …
Crystallinity Effect on Electrical Properties of PEALD–HfO2 Thin Films Prepared by Different Substrate Temperatures
Hafnium oxide (HfO2) thin film has remarkable physical and chemical properties, which
makes it useful for a variety of applications. In this work, HfO2 films were prepared on silicon …
makes it useful for a variety of applications. In this work, HfO2 films were prepared on silicon …
Investigation of electrical characterization of Al/HfO2/p-Si structures in wide temperature range
We studied the I–V characteristics of Al/HfO2/p-Si structure investigated in a wide
temperature range of 80–400 K. The zero-bias barrier height (Φ B) and ideality factor (n) …
temperature range of 80–400 K. The zero-bias barrier height (Φ B) and ideality factor (n) …
Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y2O3/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation
Direct deposition of high-dielectric-constant oxides on high-mobility semiconductors with low
trap densities is the key to high-performance metal–oxide–semiconductor (MOS) devices …
trap densities is the key to high-performance metal–oxide–semiconductor (MOS) devices …
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
Molecular beam epitaxy (MBE) invented for the growth of compound semiconductors in the
70's has been successfully extended to the advanced growth of metals, oxides …
70's has been successfully extended to the advanced growth of metals, oxides …
Capacitorless one-transistor dynamic random-access memory based on asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor with n-doped …
In this work, we present a capacitorless one-transistor dynamic random-access memory (1T-
DRAM) based on an asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect …
DRAM) based on an asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect …
Analysis of HfO2 charge trapping layer characteristics after UV treatment
The improvement in the charge storage characteristics in a non-volatile memory (NVM)
device employing an ultraviolet (UV)-treated hafnium oxide (HfO 2) layer as the charge …
device employing an ultraviolet (UV)-treated hafnium oxide (HfO 2) layer as the charge …
Effective passivation of p-and n-type In0. 53Ga0. 47As in achieving low leakage current, low interfacial traps, and low border traps
We have attained low leakage current, low interfacial traps, and low border traps by
effectively passivating both p-and n-In0. 53Ga0. 47As (InGaAs) surfaces using the same …
effectively passivating both p-and n-In0. 53Ga0. 47As (InGaAs) surfaces using the same …
GaAs MOSFETs with in situ Y2O3 dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation
Abstract Planar GaAs (100) depletion-mode (D-mode) MOSFETs as passivated with in situ
deposited Al 2 O 3/Y 2 O 3 dielectric have shown enhancement of the drain current by 167 …
deposited Al 2 O 3/Y 2 O 3 dielectric have shown enhancement of the drain current by 167 …
Fundamental Understanding of Oxide Defects in HfO2 and Y2O3 on GaAs(001) with High Thermal Stability
Oxide defects in HfO 2 and Y 2 O 3 on GaAs (001) are characterized by analyzing
capacitance-voltage (CV) hysteresis of metal-oxide-semiconductor capacitor (MOSCAP) …
capacitance-voltage (CV) hysteresis of metal-oxide-semiconductor capacitor (MOSCAP) …