Simulating biological synapses with electronic devices is a re‐emerging field of research. It
is widely recognized as the first step in hardware building brain‐like computers and artificial …

Abstract Lanthanides (Ln 3+) are a unique class of optical materials and are extensively
used as building blocks for optoelectronic device architectures due to their outstanding …

All existing transistors are based on the use of semiconductor junctions formed by
introducing dopant atoms into the semiconductor material. As the distance between …

Junctionless transistors are variable resistors controlled by a gate electrode. The silicon
channel is a heavily doped nanowire that can be fully depleted to turn the device off. The …

Advances in the fabrication and characterization of nanoscale systems now allow for a better
understanding of one of the most basic issues in science and technology: the flow of heat at …

Rapid progress in the synthesis and fundamental understanding of 1D and 2D materials
have solicited the incorporation of these nanomaterials into sensor architectures, especially …

In this letter, a double-gate junctionless tunnel field effect transistor (JL-TFET) is proposed
and investigated. The JL-TFET is a Si-channel heavily n-type-doped junctionless field effect …

This paper investigates the temperature dependence of the main electrical parameters of
junctionless (JL) silicon nanowire transistors. Direct comparison is made to silicon nanowire …

A highly scalable synapse device based on a junctionless (JL) ferroelectric (FE) FinFET is
presented for neuromorphic applications. The synaptic behaviors of the JL metal …

We experimentally investigate the sensitivity of threshold voltage (T) to the variation of
silicon nanowire (SiNW) width (W si) in gate-all-around junctionless transistors by …