Hydrogen interactions with defects in crystalline solids
SM Myers, MI Baskes, HK Birnbaum, JW Corbett… - Reviews of Modern …, 1992 - APS
Hydrogen interactions with imperfections in crystalline metals and semiconductors are
reviewed. Emphasis is given to mechanistic experiments and theoretical advances …
reviewed. Emphasis is given to mechanistic experiments and theoretical advances …
Hydrogen-related defects in crystalline semiconductors: a theorist's perspective
SK Estreicher - Materials Science and Engineering: R: Reports, 1995 - Elsevier
Hydrogen is a common impurity in all semiconductors. Although it is sometimes deliberately
introduced, hydrogen often penetrates into the crystal during device processing. It interacts …
introduced, hydrogen often penetrates into the crystal during device processing. It interacts …
[图书][B] Hydrogen Incorporation in Crystalline Semiconductors
SJ Pearton, JW Corbett, M Stavola, SJ Pearton… - 1992 - Springer
Hydrogen is, in principle, the simplest impurity in semiconductor materials. It is a common
constituent of many chemicals and gases used in the growth and processing of …
constituent of many chemicals and gases used in the growth and processing of …
[图书][B] Film deposition by plasma techniques
M Konuma - 2012 - books.google.com
Properties of thin films depend strongly upon the deposition technique and conditions
chosen. In order to achieve the desired film, optimum deposition conditions have to be found …
chosen. In order to achieve the desired film, optimum deposition conditions have to be found …
Development of advanced hydrogenation processes for silicon solar cells via an improved understanding of the behaviour of hydrogen in silicon
The understanding and development of advanced hydrogenation processes for silicon solar
cells are presented. Hydrogen passivation is incorporated into virtually all silicon solar cells …
cells are presented. Hydrogen passivation is incorporated into virtually all silicon solar cells …
Advanced bulk defect passivation for silicon solar cells
Through an advanced hydrogenation process that involves controlling and manipulating the
hydrogen charge state, substantial increases in the bulk minority carrier lifetime are …
hydrogen charge state, substantial increases in the bulk minority carrier lifetime are …
Contributed review: The feasibility of a fully miniaturized magneto-optical trap for portable ultracold quantum technology
JA Rushton, M Aldous, MD Himsworth - Review of Scientific …, 2014 - pubs.aip.org
Experiments using laser cooled atoms and ions show real promise for practical applications
in quantum-enhanced metrology, timing, navigation, and sensing as well as exotic roles in …
in quantum-enhanced metrology, timing, navigation, and sensing as well as exotic roles in …
Hydrogen bonding and diffusion in crystalline silicon
KJ Chang, DJ Chadi - Physical Review B, 1989 - APS
The nature of hydrogen bonding and diffusion in crystalline Si was investigated using an ab
initio self-consistent pseudopotential method. The relative energies of interstitial atomic …
initio self-consistent pseudopotential method. The relative energies of interstitial atomic …
Hydrogen diffusion and passivation processes in p- and n-type crystalline silicon
R Rizk, P De Mierry, D Ballutaud, M Aucouturier… - Physical review B, 1991 - APS
Several deuteration experiments on crystalline silicon have been performed for various
shallow dopant impurities (B and Al for p-type silicon; P and As for n-type silicon) and for …
shallow dopant impurities (B and Al for p-type silicon; P and As for n-type silicon) and for …
Hydrogen passivation of BO defects in Czochralski silicon
We report on hydrogen passivation of boron-oxygen defects through manipulation of the
hydrogen charge states within the silicon. Standard hydrogenation processes which do not …
hydrogen charge states within the silicon. Standard hydrogenation processes which do not …