A review of GaN on SiC high electron-mobility power transistors and MMICs
RS Pengelly, SM Wood, JW Milligan… - IEEE Transactions …, 2012 - ieeexplore.ieee.org
Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have
matured dramatically over the last few years, and many hundreds of thousands of devices …
matured dramatically over the last few years, and many hundreds of thousands of devices …
An overview of solid-state integrated circuit amplifiers in the submillimeter-wave and THz regime
LA Samoska - IEEE Transactions on Terahertz Science and …, 2011 - ieeexplore.ieee.org
We present an overview of solid-state integrated circuit amplifiers approaching terahertz
frequencies based on the latest device technologies which have emerged in the past …
frequencies based on the latest device technologies which have emerged in the past …
Technology, capabilities, and performance of low power terahertz sources
G Chattopadhyay - IEEE Transactions on Terahertz Science …, 2011 - ieeexplore.ieee.org
New and emerging terahertz technology applications make this a very exciting time for the
scientists, engineers, and technologists in the field. New sensors and detectors have been …
scientists, engineers, and technologists in the field. New sensors and detectors have been …
Nanoplasma-enabled picosecond switches for ultrafast electronics
The broad applications of ultrawide-band signals and terahertz waves in quantum
measurements,, imaging and sensing techniques,, advanced biological treatments, and very …
measurements,, imaging and sensing techniques,, advanced biological treatments, and very …
120-GHz-band wireless link technologies for outdoor 10-Gbit/s data transmission
A Hirata, T Kosugi, H Takahashi… - IEEE Transactions …, 2012 - ieeexplore.ieee.org
Our progress in 120-GHz-band wireless link technologies enables us to transmit 10-Gbit/s
data transmission over a distance of more than 1 km. The 120-GHz-band wireless link uses …
data transmission over a distance of more than 1 km. The 120-GHz-band wireless link uses …
W-band GaN power amplifier MMICs
A Brown, K Brown, J Chen, KC Hwang… - 2011 IEEE MTT-S …, 2011 - ieeexplore.ieee.org
An advanced high power, high frequency GaN semiconductor process has made possible
the design and fabrication of W-band power amplifier MMICs with unprecedented …
the design and fabrication of W-band power amplifier MMICs with unprecedented …
GaN technology for E, W and G-band applications
A Margomenos, A Kurdoghlian… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
Highly scaled GaN T-gate technology offers devices with high ft/f MAX, and low minimum
noise figure while still maintaining high breakdown voltage and high linearity typical for GaN …
noise figure while still maintaining high breakdown voltage and high linearity typical for GaN …
W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz
We report the-band large-signal power and efficiency performance of Ga-polar graded-
channel (GC) AlGaN/GaN high-electron-mobility transistors (HEMTs) with a 50-nm gate …
channel (GC) AlGaN/GaN high-electron-mobility transistors (HEMTs) with a 50-nm gate …
92–96 GHz GaN power amplifiers
M Micovic, A Kurdoghlian… - 2012 IEEE/MTT-S …, 2012 - ieeexplore.ieee.org
We report the test results of a family of 92-96 GHz GaN power amplifiers (PA) with increasing
gate peripheries (150 µm to 1200 µm). The 1200 µm, 3-stage PA produces 2.138 W output …
gate peripheries (150 µm to 1200 µm). The 1200 µm, 3-stage PA produces 2.138 W output …
Schottky diode based 1.2 THz receivers operating at room-temperature and below for planetary atmospheric sounding
E Schlecht, JV Siles, C Lee, R Lin… - IEEE Transactions …, 2014 - ieeexplore.ieee.org
In this paper, we report on the design, fabrication and test of two designs for all-solid-state
planar Schottky diode based receivers working in the 1.2 THz range. At room temperature, a …
planar Schottky diode based receivers working in the 1.2 THz range. At room temperature, a …