Reliable and accurate knowledge of the physical properties of elementary point defects is
crucial for predictive modeling of the evolution of radiation damage in materials employed in …

We have applied positron annihilation spectroscopy to study the vacancy-type defects in β-
Ga 2 O 3 single crystals. The three different types of crystals were prepared by Czochralski …

We show that Be exhibits amphoteric behavior in GaN, involving switching between
substitutional and interstitial positions in the lattice. This behavior is observed through the …

Three topical materials systems are discussed from the point of view of point defect
characterization with positron annihilation spectroscopy. The family of III‐nitride …

We present an analysis of positron lifetimes in solids with unprecedented depth. Instead of
modeling correlation effects with density functionals, we study positron-electron wave …

The presence of defects in the narrow gap semiconductors GaSb and InSb affects their
dopability and hence applicability for a range of optoelectronic applications. Here, we report …

A profound understanding of the fundamental properties of point defects in high entropy
alloys (HEAs) is essential to predict their irradiation properties. In this work, particle …

We present a multiprobe transport analysis that effectively separates bulk and edge currents
in large Hall bar devices with standard geometries. Applied to transport measurements on …

A detailed understanding of the irradiation-induced damage evolution is valuable when
considering materials for extreme environments, such as in fusion applications. In this work …

This Perspective focuses on experimental and theoretical aspects of positron annihilation
spectroscopy. This set of methods is highly suitable for identifying and quantifying vacancy …