An overview of lifetime management of power electronic converters

S Rahimpour, H Tarzamni, NV Kurdkandi… - Ieee …, 2022 - ieeexplore.ieee.org
An expected lifetime of converters is of great importance for optimal decision-making in the
planning of modern Power Electronic (PE) systems. Hence, the lifetime management of …

An overview on safe operation of grid-connected converters from resilience perspective: Analysis and design

X Zha, M Huang, Y Liu, Z Tian - International Journal of Electrical Power & …, 2022 - Elsevier
High power grid-connected converters exposed to disturbances such as grid faults and
cyber-attacks may pose enormous threat to the safety of the power system. This predicament …

[图书][B] Multiphysics simulation by design for electrical machines, power electronics and drives

M Rosu, P Zhou, D Lin, DM Ionel, M Popescu… - 2017 - books.google.com
Presents applied theory and advanced simulation techniques for electric machines and
drives This book combines the knowledge of experts from both academia and the software …

Failure Analysis of 1200-V/150-A SiC MOSFET Under Repetitive Pulsed Overcurrent Conditions

JA Schrock, BN Pushpakaran, AV Bilbao… - … on Power Electronics, 2015 - ieeexplore.ieee.org
SiC MOSFETs are a leading option for increasing the power density of power electronics;
however, for these devices to supersede the Si insulated-gate bipolar transistor, their …

A 3-D thermal network model for monitoring of IGBT modules

K Heng, X Yang, X Wu, J Ye - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
With the continuous improvement of power densities and power levels for power converters,
temperature information at critical sites of the power modules has become essential in …

A Self-Commissioning Edge Computing Method for Data-Driven Anomaly Detection in Power Electronic Systems

PI Gómez, MEL Gajardo, N Mijatovic… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Ensuring the reliability of power electronic converters is a matter of great importance, and
data-driven condition monitoring techniques are cementing themselves as an important tool …

Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit

C Abbate, G Busatto, A Sanseverino, D Tedesco… - Microelectronics …, 2019 - Elsevier
The paper reports the results of a study based on experimental data and finite element
simulations about the failure mechanism of 650 V p-doped GaN power HEMT operated in …

Modern IGBT gate driving methods for enhancing reliability of high-power converters—An overview

H Luo, F Iannuzzo, PD Reigosa, F Blaabjerg… - Microelectronics …, 2016 - Elsevier
This paper presents a survey of existing gate driving approaches for improving reliability of
Insulated Gate Bipolar Transistors (IGBTs). An extensive and various lists of techniques are …

Reliability analysis of sintered Cu joints for SiC power devices under thermal shock condition

Y Gao, S Takata, C Chen, S Nagao, K Suganuma… - Microelectronics …, 2019 - Elsevier
In this study, the thermal shock reliability of sintered Cu joints on SiC power device
application was investigated. Firstly, sintered Cu joints were used to bond chips and …

Comparisons of two turn-off failures under clamped inductive load in planar FS 3.3 kV/50 A IGBT chip

J Fan, Y Wang, F He, M Gao, Z Zhao… - … on Power Electronics, 2022 - ieeexplore.ieee.org
Turn-off failure under clamped inductive load, is one of the most concerns in insulated gate
bipolar transistor (IGBT) chips. Besides, this turn-off failure can be attributed to two causes …