Effect of curie temperature on electrical parameters of NC-FinFET and digital switching application of NC-FinFET

RK Maurya, V Kumar, R Saha, B Bhowmick - Microelectronics Journal, 2023 - Elsevier
Power consumption of the device enhances as temperature rises, degrading the
performance of conventional MOSFET. In the present paper the performance parameters of …

Design Space Optimization for Eradication of NDR Effect in Dielectric/Ferroelectric Stacked Negative Capacitance Multi-Gate FETs at Sub-3nm Technology for Digital …

S Valasa, VR Kotha, S Tayal… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
In this study, for the first time we benchmark the DC/analog/RF performance of
Dielectric/Ferroelectric Stacked Negative capacitance (NC)-based multi-gate devices …

Performance optimization of epitaxial-layer based Si/SiGe hetero-junction area scaled tunnel FET label-free biosensors considering steric hindrance

S Panwar, S Srivastava, M Shashidhara, D Joshi… - Solid-State …, 2023 - Elsevier
Abstract This paper explores Si/SiGe hetero-junction dielectrically modulated area-scaled
tunnel FET (DM-ASTFET) for label-free bio-sensing applications. The proposed sensor can …

Understanding the Impact of Extension Region on Stacked Nanosheet FET: Analog Design Perspective

S Srivastava, M Shashidhara, S Panwar, S Yadav… - Solid-State …, 2023 - Elsevier
This work incorporates an in-depth physics-based investigation of Nanosheet FET's
(NSFET's) extension region for analog circuit design. When extension length (L EXT) is …

Thin-body effects in double-gate tunnel field-effect transistors

ND Chien, BH Thai, CH Shih - Journal of Physics D: Applied …, 2024 - iopscience.iop.org
Scaling down the body thickness (T b) of double-gate tunnel field-effect transistors (DG-
TFETs) is helpful in suppressing short-channel effects, but it may give rise to thin-body …

Spacer Design Strategies at sub-5 nm technology node for Junctionless Forksheet FET: Bridging Device Optimization and Circuit Efficacy-A Dielectric Perspective

D Gurre, V Dasari, K Mulaga, S Valasa… - … on Dielectrics and …, 2024 - ieeexplore.ieee.org
For the first time, we report on the spacer design guidelines for the Junctionless Forksheet
FET (JL-FSFET) at the sub-5nm technology node. Recently, this device has emerged as the …

Proposal & Investigation of Schottky Ring Engineered Reconfigurable Nanowire Transistor

S Panwar, S Srivastava, M Shashidhara… - … on Circuits and …, 2024 - ieeexplore.ieee.org
This work presents a junction-engineered Schottky Ring Engineered Reconfigurable
Nanowire Transistor (SR 2 NT) with a dual gate for the first time. Schottky Ring (SR) is …