Gas sensors on pn junctions [1, 2] have some advantages in comparison with these, based
on oxide polycrystalline films [3] and Schottky diodes [4]. Pn junctions in wide-band …

The influence of ammonia, water and ethylene vapors on IV characteristics of forward and
reverse currents, as well as on the kinetics of the surface current in silicon pn structures was …

The atomic system is simulated by the Monte-Carlo method of computer modeling.
Analyzing results of computer modeling, we have found out some features of structure of thin …

Досліджено вплив тривалої витримки кремнієвих pn переходів у вологих парах аміаку з
парціальним тиском 12 кПа на характеристики pn структур як сенсорів парів аміаку та …

The effect of a treatment in concentrated wet ammonia vapors on IV characteristics of GaAs
pn junctions, measured in air and іn ammonia vapors, was studied. Such a treatment …

The influence of ammonia vapors on IV characteristics of forward and reverse currents and
kinetics of surface currents in GaAs-AlGaAs pn junctions with degenerated p+ region was …

The influence of ammonia and water vapors on IV characteristics of the reverse currents in
Si and GaAs pn junctions was studied. At most of the studied samples, the ammonia-and …

Influence of the storage (low-temperature annealing) of sulphur-passivated GaAs pn
structures in a neutral (helium) atmosphereat room temperature on IV characteristics of …

A procedure has been developed for homocharge and heterocharge components
separation of the total thermally stimulated depolarization current in corona polarized PVDF …

The time-resolved surface current in an n-conducting channel, due to ammonia and water
molecules adsorption in GaAs pn structures was studied. It is shown that the presence of …