[HTML][HTML] Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters

R Kudrawiec, D Hommel - Applied Physics Reviews, 2020 - pubs.aip.org
A key material system for opto-and high-power electronics are III-nitrides. Their functionality
can be expanded when bandgap engineering is extended beyond common materials such …

Electronic band structure of highly mismatched GaN1− xSbx alloys in a broad composition range

N Segercrantz, KM Yu, M Ting, WL Sarney… - Applied Physics …, 2015 - pubs.aip.org
In this letter, we study the optical properties of GaN 1− x Sb x thin films. Films with an Sb
fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant …

Selective incorporation of antimony into gallium nitride

Y Liu, IA Navid, Z Mi, E Kioupakis - arXiv preprint arXiv:2405.08683, 2024 - arxiv.org
Dilute concentrations of antimony (Sb) incorporation into GaN induce strong band-gap
bowing and tunable room-temperature photoluminescence from the UV to the green spectral …

CVD grown GaSb x N 1− x films as visible-light active photoanodes

D Zywitzki, D Mitoraj, Y Vilk, OM Reyes… - Dalton …, 2021 - pubs.rsc.org
The III–V semiconductor GaN is a promising material for photoelectrochemical (PEC) cells,
however the large bandgap of 3.45 eV is a considerable hindrance for the absorption of …

[HTML][HTML] Undoped p-type GaN1–xSbx alloys: Effects of annealing

N Segercrantz, Y Baumgartner, M Ting, KM Yu… - Applied Physics …, 2016 - pubs.aip.org
We report p-type behavior for undoped GaN 1–x Sb x alloys with x≥ 0.06 grown by
molecular beam epitaxy at low temperatures (≤ 400 C). Rapid thermal annealing of the …

Optoelectronic properties of III-V compounds and alloys

N Segercrantz - 2017 - aaltodoc.aalto.fi
GaSb and its related alloys possess properties attractive for applications in optoelectronic
devices. By replacing the anion with other group V elements, eg with N or Bi, the band gap …