The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Rapid digital technology advancement has resulted in a tremendous increase in computing
tasks imposing stringent energy efficiency and area efficiency requirements on next …

Artificial skin that simultaneously mimics sensory feedback and mechanical properties of
natural skin holds substantial promise for next-generation robotic and medical devices …

Ultra-scaled transistors are of interest in the development of next-generation electronic
devices,–. Although atomically thin molybdenum disulfide (MoS2) transistors have been …

Abstract The International Roadmap for Devices and Systems (IRDS) forecasts that, for
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …

Two-dimensional semiconductors can be used to build next-generation electronic devices
with ultrascaled channel lengths. However, semiconductors need to be integrated with high …

Aligned semiconducting carbon nanotubes are a potential alternative to silicon in the
creation of scaled field-effect transistors (FETs) due to their easy miniaturization and high …

Our demand for ubiquitous and reliable gas detection is spurring the design of intelligent
and enabling gas sensors for the next-generation Internet of Things and Artificial …

Two-dimensional semiconductors such as layered transition metal dichalcogenides can
offer superior immunity to short-channel effects compared with bulk semiconductors such as …

Single-walled carbon nanotubes (CNTs) may enable the fabrication of integrated circuits
smaller than 10 nanometers, but this would require scalable production of dense and …