Resistive switching (RS) is currently one of the hot topics in the frontier between materials
science and microelectronics, crosslinking both research communities. Among the different …

Abstract In recent years Resistive Random Access Memory (RRAM) is emerging as the most
promising candidate to substitute the present Flash Technology in the non-volatile memory …

In this report, the monovalent cations of sodium and potassium are doped into the ZnO
matrix to explore for resistive switching. The structural analysis confirms that Na+ and K+ …

A graphical representation of current-voltage (IV) measurements of typical memristive
interfaces at constant temperature is presented. This is the starting point to extract relevant …

The resistive switching (RS) properties as a function of temperature were studied for Ag/La
1− x Sr x CoO 3 (LSCO) interfaces. The LSCO is a fully relaxed 100 nm film grown by metal …

Current-voltage (IV) characteristics and the temperature dependence of the contact
resistance [R (T)] of Au/YBa 2 Cu 3 O 7− δ (optimally doped YBCO) interfaces have been …

Nanostructured zirconia and gold films (ns-Au/ZrOx) have been demonstrated as devices
characterized by non-linear and hysteretic electrical behavior, with short-term memory and …

The microelectronics industry is currently searching for reliable redox-based resistive
switching (RS) memories which are filament-free, scale with the electrode size and do not …

In this work, the resistive switching and the conducting mechanism of forming-free TiO 2 thin
films between Ti and Pt electrodes were investigated. The devices were fabricated …

We have studied long time relaxation effects on the nonvolatile resistance state produced by
resistive switching in devices composed by ceramic YBa 2 Cu 3 O 7− δ and La 0.7 Sr 0.3 …