Shallow and undoped germanium quantum wells: a playground for spin and hybrid quantum technology
Buried‐channel semiconductor heterostructures are an archetype material platform for the
fabrication of gated semiconductor quantum devices. Sharp confinement potential is …
fabrication of gated semiconductor quantum devices. Sharp confinement potential is …
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays
R Bergamaschini, F Isa, CV Falub, P Niedermann… - Surface science …, 2013 - Elsevier
In this report we present a novel strategy in selective epitaxial growth on top of Si pillars,
which results in a tessellated Ge film, composed by self-aligned micron-sized crystals in a …
which results in a tessellated Ge film, composed by self-aligned micron-sized crystals in a …
Continuum modelling of semiconductor heteroepitaxy: an applied perspective
Semiconductor heteroepitaxy involves a wealth of qualitatively different, competing
phenomena. Examples include three-dimensional island formation, injection of dislocations …
phenomena. Examples include three-dimensional island formation, injection of dislocations …
Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading
O Skibitzki, MH Zoellner, F Rovaris, MA Schubert… - Physical Review …, 2020 - APS
The threading dislocation density (TDD) in plastically relaxed Ge/Si (001) heteroepitaxial
films is commonly observed to decrease progressively with their thickness due to mutual …
films is commonly observed to decrease progressively with their thickness due to mutual …
Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications
The fabrication of high‐speed electronic and communication devices has rapidly grown the
demand for high mobility semiconductors. However, their high cost and complex fabrication …
demand for high mobility semiconductors. However, their high cost and complex fabrication …
High temperature x ray diffraction measurements on Ge/Si (001) heterostructures: A study on the residual tensile strain
G Capellini, M De Seta, P Zaumseil… - Journal of Applied …, 2012 - pubs.aip.org
Ge/Si (001) heterostructures grown by means of ultrahigh vacuum chemical vapor
deposition have been investigated by means of variable temperature high resolution x ray …
deposition have been investigated by means of variable temperature high resolution x ray …
High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz
E Campagna, E Talamas Simola, T Venanzi… - …, 2024 - degruyter.com
A parabolic potential that confines charge carriers along the growth direction of quantum
wells semiconductor systems is characterized by a single resonance frequency, associated …
wells semiconductor systems is characterized by a single resonance frequency, associated …
[PDF][PDF] Unexpected dominance of vertical dislocations in high-misfit Ge/Si (001) films and their elimination by deep substrate patterning
Due to their compatibility with standard Si CMOS technology, Ge (or SiGe) heterostructures
on Si (001) play an important role in modern information and communications technology …
on Si (001) play an important role in modern information and communications technology …
Low-temperature germanium thin films on silicon
We discuss thermal evaporation of Germanium thin films as a suitable route to realizing near-
infrared detectors integrated on a Silicon platform. We study the structural properties of …
infrared detectors integrated on a Silicon platform. We study the structural properties of …
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy
MH Zoellner, MI Richard, GA Chahine… - … applied materials & …, 2015 - ACS Publications
Advanced semiconductor heterostructures are at the very heart of many modern
technologies, including aggressively scaled complementary metal oxide semiconductor …
technologies, including aggressively scaled complementary metal oxide semiconductor …