Shallow and undoped germanium quantum wells: a playground for spin and hybrid quantum technology

A Sammak, D Sabbagh, NW Hendrickx… - Advanced Functional …, 2019 - Wiley Online Library
Buried‐channel semiconductor heterostructures are an archetype material platform for the
fabrication of gated semiconductor quantum devices. Sharp confinement potential is …

Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays

R Bergamaschini, F Isa, CV Falub, P Niedermann… - Surface science …, 2013 - Elsevier
In this report we present a novel strategy in selective epitaxial growth on top of Si pillars,
which results in a tessellated Ge film, composed by self-aligned micron-sized crystals in a …

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

R Bergamaschini, M Salvalaglio, R Backofen… - … in Physics: X, 2016 - Taylor & Francis
Semiconductor heteroepitaxy involves a wealth of qualitatively different, competing
phenomena. Examples include three-dimensional island formation, injection of dislocations …

Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading

O Skibitzki, MH Zoellner, F Rovaris, MA Schubert… - Physical Review …, 2020 - APS
The threading dislocation density (TDD) in plastically relaxed Ge/Si (001) heteroepitaxial
films is commonly observed to decrease progressively with their thickness due to mutual …

Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

A Imran, M Sulaman, M Yousaf… - Advanced Materials …, 2023 - Wiley Online Library
The fabrication of high‐speed electronic and communication devices has rapidly grown the
demand for high mobility semiconductors. However, their high cost and complex fabrication …

High temperature x ray diffraction measurements on Ge/Si (001) heterostructures: A study on the residual tensile strain

G Capellini, M De Seta, P Zaumseil… - Journal of Applied …, 2012 - pubs.aip.org
Ge/Si (001) heterostructures grown by means of ultrahigh vacuum chemical vapor
deposition have been investigated by means of variable temperature high resolution x ray …

High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz

E Campagna, E Talamas Simola, T Venanzi… - …, 2024 - degruyter.com
A parabolic potential that confines charge carriers along the growth direction of quantum
wells semiconductor systems is characterized by a single resonance frequency, associated …

[PDF][PDF] Unexpected dominance of vertical dislocations in high-misfit Ge/Si (001) films and their elimination by deep substrate patterning

A Marzegalli, F Isa, H Groiss, E Müller, CV Falub… - Adv. Mater, 2013 - academia.edu
Due to their compatibility with standard Si CMOS technology, Ge (or SiGe) heterostructures
on Si (001) play an important role in modern information and communications technology …

Low-temperature germanium thin films on silicon

V Sorianello, L Colace, N Armani, F Rossi… - Optical Materials …, 2011 - opg.optica.org
We discuss thermal evaporation of Germanium thin films as a suitable route to realizing near-
infrared detectors integrated on a Silicon platform. We study the structural properties of …

Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy

MH Zoellner, MI Richard, GA Chahine… - … applied materials & …, 2015 - ACS Publications
Advanced semiconductor heterostructures are at the very heart of many modern
technologies, including aggressively scaled complementary metal oxide semiconductor …