Abstract InGaAs/InAlAs/InP high electron mobility transistor (HEMT) affords superb high-
frequency operation. In this paper, the DC and RF characteristics of a novel …

Nowadays, Infrared Optical Detectors (IOD) play a very important role in the receivers of
optical communication systems. The pin and APD photo-detectors are popular photo …

This paper presents the design and simulation of a 10 GHz Low Noise Amplifier (LNA) for
Wireless communication systems. The simulation result has been performed by using the …

AlGaN/GaN-based HEMT with different gate structure are designed ie, 150 nm rectangular
shaped HEMT and 90 nm T-shaped HEMT. It is shown that the DC parameters like drain …

The work demonstrates different aspect of the noise performance over the AlInGaN HEMTs.
Analysis of thermal Noise (i 2 d), flicker noise (1/f) and noise figure (F min) are employed to …

Recent interest in the optical behavior of bulk semiconductor based alloy heterostructures [1-
3] has led to this work that simulates the effect of optical illumination on the DC parameters …

This paper presents simulation of optical effects on the DC parameters of 100 nm single gate
InAlAs/InGaAs High Electron Mobility Transistor (HEMT). The advantage of this model is that …

The paper presents an analysis of electron transport processes in quantum wells of
submicron heterostructural transistors. Techniques for modeling processes in …

In this paper, we report the noise performance of a 50nm gate length InAs based DG-HEMT
for high frequency applications. Normally the noise is predominant at the channel/barrier …