The semiconductor ZnO has gained substantial interest in the research community in part
because of its large exciton binding energy (60 meV) which could lead to lasing action …

Nitrogen-doped films of ZnO grown by two methods, metalorganic chemical vapor
deposition (MOCVD) and reactive sputtering, were studied with x-ray and ultraviolet …

The pulsed laser deposition (PLD) technique has been applied for the epitaxial growth of
ZnO for more than two decades. The emergence of high-temperature stability of the excitonic …

ZnO films with preferred orientation along the (002) plane were successfully deposited by
the sol–gel method using Zn (CH3COO) 2· 2H2O as starting material and inorganic …

The characteristics of device structures that employ phosphorus-doped (Zn, Mg) O have
been examined in a effort to delineate the carrier type behavior in this material. The …

Nitrogen-doped p-type ZnO (ZnO: N) films have been achieved by ultrasonic spray pyrolysis
at atmosphere. The high structural quality of the obtained films was confirmed by x-ray …

Demand for efficient solid-state lighting (SSL) devices has accelerated in recent years and
will continue to grow in the foreseeable future. As a result, interest in developing advanced …

Wide band gap nitrogen-doped p-type ZnO films are prepared by radio-frequency
magnetron sputtering from a 99.99% purity ZnO target. The sputtering gas is Ar mixed with …

Thin films of p-type ZnO: N have been obtained by thermally oxidizing zinc oxynitride films
prepared by plasma enhanced chemical vapour deposition (PECVD). The p-type ZnO: N …

Solid solutions of GaN in ZnO (Zn1− z Ga z)(O1− x N x)(x and z≤ 0.15) have been prepared
by simple solution combustion method. Except for minor changes in the lattice contraction …