Graphene-based ambipolar RF mixers

H Wang, A Hsu, J Wu, J Kong… - IEEE Electron Device …, 2010 - ieeexplore.ieee.org
The combination of the unique properties of graphene with new device concepts and
nanotechnology can overcome some of the main limitations of traditional electronics in terms …

Graphene FETs for zero-bias linear resistive FET mixers

JS Moon, HC Seo, M Antcliffe, D Le… - IEEE Electron …, 2013 - ieeexplore.ieee.org
In this letter, we present the first graphene FET operation for zero-bias resistive FET mixers,
utilizing modulation of graphene channel resistance rather than ambipolar mixer operations …

Chip-last (RDL-first) fan-out panel-level packaging (FOPLP) for heterogeneous integration

JH Lau, CT Ko, CY Peng, KM Yang… - Journal of …, 2020 - meridian.allenpress.com
In this investigation, the chip-last, redistribution-layer (RDL)–first, fan-out panel-level
packaging (FOPLP) for heterogeneous integration is studied. Emphasis is placed on the …

Double-balanced graphene integrated mixer with outstanding linearity

H Lyu, H Wu, J Liu, Q Lu, J Zhang, X Wu, J Li, T Ma… - Nano …, 2015 - ACS Publications
A monolithic double-balanced graphene mixer integrated circuit (IC) has been successfully
designed and fabricated. The IC adopted the cross-coupled resistive mixer topology …

A Single-Ended Resistive -Band AlGaN/GaN HEMT MMIC Mixer

M Sudow, K Andersson, M Fagerlind… - IEEE transactions on …, 2008 - ieeexplore.ieee.org
A broadband highly linear X-band mixer in AlGaN/GaN monolithic microwave integrated
circuit technology has been designed, processed, and characterized. The design is based …

An empirical large-signal model for SiC MESFETs with self-heating thermal model

KS Yuk, GR Branner - IEEE transactions on microwave theory …, 2008 - ieeexplore.ieee.org
An empirical large-signal model for high-power microwave silicon-carbide MESFETs
capable of predicting self-heating thermal behavior is presented. A generalized drain …

An active bandpass filter for LTE/WLAN applications using robust active inductors in gallium nitride

TB Herbert, JS Hyland, S Abdullah… - … on Circuits and …, 2021 - ieeexplore.ieee.org
This brief demonstrates the performance of the first active bandpass filter to implement an
active inductor in gallium nitride (GaN) technology. Fabrication of the filter and inductor was …

Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor

C San Chu, Y Zhou, KJ Chen… - IEEE electron device …, 2005 - ieeexplore.ieee.org
We report the characterization of quality (Q)-factor of RF metal-semiconductor-metal (MSM)
planar interdigitated varactors fabricated by standard AlGaN/GaN HEMT process. The MSM …

Broadband, high-linearity switches for millimeter-wave mixers using scaled SOI CMOS

C Hill, JF Buckwalter - IEEE Open Journal of the Solid-State …, 2022 - ieeexplore.ieee.org
This work demonstrates new circuit techniques in distributed-stacked-complimentary
(DiSCo) switches that enable picosecond switching speed in RF CMOS SOI switches. By …

A highly linear double balanced Schottky diode S-band mixer

M Sudow, K Andersson, PA Nilsson… - IEEE microwave and …, 2006 - ieeexplore.ieee.org
A high-level double balanced SiC Schottky diode mixer in SiC monolithic microwave
integrated circuit (MMIC) technology has been designed, processed and characterized. The …