[HTML][HTML] A brief review of high efficiency III-V solar cells for space application
J Li, A Aierken, Y Liu, Y Zhuang, X Yang, JH Mo… - Frontiers in …, 2021 - frontiersin.org
The demands for space solar cells are continuously increasing with the rapid development
of space technologies and complex space missions. The space solar cells are facing more …
of space technologies and complex space missions. The space solar cells are facing more …
[HTML][HTML] Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters
R Kudrawiec, D Hommel - Applied Physics Reviews, 2020 - pubs.aip.org
A key material system for opto-and high-power electronics are III-nitrides. Their functionality
can be expanded when bandgap engineering is extended beyond common materials such …
can be expanded when bandgap engineering is extended beyond common materials such …
[图书][B] The Electrical Engineering Handbook-Six Volume Set
RC Dorf - 2018 - api.taylorfrancis.com
In two editions spanning more than a decade, The Electrical Engineering Handbook stands
as the definitive reference to the multidisciplinary field of electrical engineering. Our …
as the definitive reference to the multidisciplinary field of electrical engineering. Our …
Band engineering in dilute nitride and bismide semiconductor lasers
Highly mismatched semiconductor alloys such as GaN x As 1− x and GaBi x As 1− x have
several novel electronic properties, including a rapid reduction in energy gap with …
several novel electronic properties, including a rapid reduction in energy gap with …
Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes
Strain-compensated InGaN-AlGaN quantum wells (QW) are investigated as improved active
regions for lasers and light emitting diodes. The strain-compensated QW structure consists …
regions for lasers and light emitting diodes. The strain-compensated QW structure consists …
III-nitride photonics
The progress in III-Nitride photonics research in 2009 is reviewed. The III-Nitride photonics
research is a very active field with many important applications in the areas of energy …
research is a very active field with many important applications in the areas of energy …
Current injection efficiency of InGaAsN quantum-well lasers
The concept of below-threshold and above-threshold current injection efficiency of quantum
well (QW) lasers is clarified. The analysis presented here is applied to the current injection …
well (QW) lasers is clarified. The analysis presented here is applied to the current injection …
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers
S Tomic, EP O'Reilly, R Fehse… - IEEE Journal of …, 2003 - ieeexplore.ieee.org
We present a comprehensive theoretical and experimental analysis of 1.3-μm
InGaAsN/GaAs lasers. After introducing the 10-band k/spl middot/p Hamiltonian which …
InGaAsN/GaAs lasers. After introducing the 10-band k/spl middot/p Hamiltonian which …
Low threshold InGaAsN/GaAs lasers beyond 1500 nm
G Jaschke, R Averbeck, L Geelhaar, H Riechert - Journal of Crystal Growth, 2005 - Elsevier
GaAs-based InGaAsN quantum well films grown by molecular beam epitaxy are
characterized by photoluminescence spectroscopy. InGaAsN with high N concentrations of …
characterized by photoluminescence spectroscopy. InGaAsN with high N concentrations of …
Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm
Extremely low threshold-current-density In0. 4Ga0. 6As quantum-well (QW) lasers have
been realized in the 1215–1233 nm wavelength regime. The measured room-temperature …
been realized in the 1215–1233 nm wavelength regime. The measured room-temperature …