Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET
This paper critically investigates the effect of doping on different device characteristics of a
Ge/Si interfaced nanowire MOSFET (GSI-NWM) for analog performance enhancement. The …
Ge/Si interfaced nanowire MOSFET (GSI-NWM) for analog performance enhancement. The …
A comprehensive analysis and performance comparison of CombFET and NSFET for CMOS circuit applications
NA Kumari, P Prithvi - AEU-International Journal of Electronics and …, 2023 - Elsevier
The performance of comb-like channel field effect transistor (CombFET) and nanosheet FET
(NSFET) is addressed at both device and circuit levels at the 3-nm node. The CombFET is …
(NSFET) is addressed at both device and circuit levels at the 3-nm node. The CombFET is …
Analytical modeling and simulation of gate-all-around Junctionless Mosfet for biosensing applications
A new analytical model for a Junctionless Field Effect Transistor that can be used in
biosensor applications is proposed in this research work. The Semiconductor device …
biosensor applications is proposed in this research work. The Semiconductor device …
Triple metal surrounding gate junctionless tunnel FET based 6T SRAM design for low leakage memory system
The promising capability of Triple Material Surrounding Gate Junctionless Tunnel FET
(TMSG–JL–TFET) based 6 T SRAM structure is demonstrated by employing Germanium …
(TMSG–JL–TFET) based 6 T SRAM structure is demonstrated by employing Germanium …
Partially extended germanium source DG-TFET: design, analysis, and optimization for enhanced digital and analog/RF parameters
Tunnel field-effect transistors have demonstrated a predominant performance in the field of
semiconductors. However, low drive current and ambipolarity are major challenges for …
semiconductors. However, low drive current and ambipolarity are major challenges for …
Modeling and simulation of double gate dielectric stack silicon substrate memristor circuits for low power applications
G Lakshmi Priya, N Rawat, S Abhishek, M Venkatesh - Silicon, 2022 - Springer
Increasingly, emerging silicon based memristive devices are being used for critical
applications which requires lesser power consumption. Due to its unique hysteresis …
applications which requires lesser power consumption. Due to its unique hysteresis …
Exploring tunable arsenide/antimonide tunneling interfaced junctionless TFET for gas sensing applications
This study presents a numerical analysis of a highly sensitive catalytic metal gate-based gas
sensor utilizing a hetero-material arsenide/antimonide tunneling interfaced junctionless …
sensor utilizing a hetero-material arsenide/antimonide tunneling interfaced junctionless …
Performance enhancement of charge plasma-based junctionless TFET (JL-TFET) using stimulated n-pocket and heterogeneous gate dielectric
Junctionless tunneling field-effect transistor (JL-TFET) is an excellent potential alternative to
conventional MOSFET and TFET due to the lack of a steep doping profile, which makes it …
conventional MOSFET and TFET due to the lack of a steep doping profile, which makes it …
A numerical investigation of stacked oxide Junctionless high K with Vaccum metal oxide semiconductor field effect transistor
The amalgamation of high dielectric permittivity material along with vaccum based dual
material junctionless transistor with surrounding gate (DUM-HIK-VAC-JLSG-MOSFET) was …
material junctionless transistor with surrounding gate (DUM-HIK-VAC-JLSG-MOSFET) was …
Performance Analysis of Emerging Low-Power Junctionless Tunnel FETs
GL Priya, M Venkatesh, S Preethi… - Emerging Low-Power …, 2022 - taylorfrancis.com
Continued scaling of devices has been strongly influenced by the recent advancements in
channel engineering and device fabrication technology for realizing improved performance …
channel engineering and device fabrication technology for realizing improved performance …