Diamond nucleation on unscratched Si surface is great importance for its growth, and
detailed understanding of this process is therefore desired for many applications. The …

Carbon doping in hexagonal multi-walled boron nitride nanotubes (BNNTs) through ion
implantation is successfully achieved. Nuclear reaction analysis confirms that carbon atoms …

Silicon carbide (SiC) exhibits many important properties, such as high intrinsic strength,
stiffness, and high temperature stability. Therein, it is considered to be one of the most …

Carbon dioxide ions with 29keV energy were implanted into (400) high-purity p-type silicon
wafers at nearly room temperature and doses in the range between 1× 1016 and 3× …

Ion beam synthesis using high-fluence carbon ion implantation in silicon in combination with
subsequent or in situ thermal annealing has been shown to be able to form nanocrystalline …

Silicon carbide (SiC) is a superior material potentially replacing conventional silicon for high-
power and high-frequency microelectronic applications. Ion beam synthesis (IBS) is a novel …

This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for
photoluminescence. Carbon ions at 90keV were implanted in single crystalline silicon …

In this study, diamond films have been synthesized on adamantane-coated (100) Si
substrates at 530 C by microwave plasma chemical vapor deposition from a gaseous …

Silicon carbide (SiC) is a very promising candidate material that is only surpassed by
diamond in performance for high-power microelectronic device applications. However …

We report a new method for growing hexagonal columnar nanograin structured silicon
carbide (SiC) thin films on silicon substrates by using graphene–graphitic carbon nanoflakes …