Stability and reliability of lateral GaN power field-effect transistors
JA Del Alamo, ES Lee - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate,
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
Applications of depth-resolved cathodoluminescence spectroscopy
LJ Brillson - Journal of Physics D: Applied Physics, 2012 - iopscience.iop.org
Depth-resolved cathodoluminescence spectroscopy (DRCLS) has developed over the past
few decades into a powerful technique for characterizing electronic properties of advanced …
few decades into a powerful technique for characterizing electronic properties of advanced …
Reliability analysis of permanent degradations on AlGaN/GaN HEMTs
In this paper, we review and add additional data and understandings on our findings on the
two most common failure modes of GaN-based HEMTs: 1) permanent gate leakage current …
two most common failure modes of GaN-based HEMTs: 1) permanent gate leakage current …
Reliability studies of AlGaN/GaN high electron mobility transistors
DJ Cheney, EA Douglas, L Liu, CF Lo… - Semiconductor …, 2013 - iopscience.iop.org
AlGaN/GaN high electron mobility transistors are gaining commercial acceptance for use in
high power and high frequency applications, but the degradation mechanisms that drive …
high power and high frequency applications, but the degradation mechanisms that drive …
[HTML][HTML] Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors
Recent experiments show that GaN/AlGaN high-electron-mobility transistors suffer from
significant current collapse, which is caused by an increase in the concentration of traps with …
significant current collapse, which is caused by an increase in the concentration of traps with …
On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress
M Montes Bajo, C Hodges, MJ Uren… - Applied Physics Letters, 2012 - pubs.aip.org
The degradation of AlGaN/GaN high electron mobility transistors after off-state stress is
studied by means of electroluminescence (EL) analysis, gate leakage current (I g) …
studied by means of electroluminescence (EL) analysis, gate leakage current (I g) …
Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop
In this work we report on the two most common failure modes for AlGaN/GaN-based HEMTs:
the gate leakage increase and the output current drop. First, by performing step-stress …
the gate leakage increase and the output current drop. First, by performing step-stress …
Degradation mechanisms for GaN and GaAs high speed transistors
We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron
mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the …
mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the …
Gate bias dependence of defect-mediated hot-carrier degradation in GaN HEMTs
Monte Carlo analysis of hot-electron degradation in AlGaN/GaN high-electron mobility
transistors shows that, for gate voltages corresponding to semi-ON bias conditions, the …
transistors shows that, for gate voltages corresponding to semi-ON bias conditions, the …