The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …

In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell
nanowire-based LEDs grown using selective-area epitaxy and characterize their electro …

We present the first demonstration of RF characteristics of electrically injected GaN/InGaN
core–shell nanowire-based micro light-emitting diodes (μLEDs) for μLED displays and …

GaN nanowires are promising for optical and optoelectronic applications because of their
waveguiding properties and large optical band gap. However, developing a precise …

Highly efficient nonpolar AlGaN nanowire ultraviolet light‐emitting diode is developed,
wherein core–shell AlGaN multiple quantum well layers are incorporated in the nonpolar …

This paper investigates the polarization-dependent light extraction efficiency (η extraction)
and the effect of passivation layer for AlGaN-based nanowire (NW) deep-ultraviolet (DUV) …

Semiconductor nanowires have been used in a variety of passive and active optoelectronic
devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs) …

Controlled bottom-up selective-area epitaxy (SAE) is used to tailor the morphology and
photoluminescence properties of GaN/InGaN core–shell nanowire arrays. The nanowires …

We report on the fabrication of ordered arrays of InGaN/GaN nanowire quantum disks by a
top-down selective-area sublimation method. Using a combination of two-dimensional …

Abstract Core–shell Ge/Ge 1-x Sn x nanowires exhibit strong room temperature light
emission under optical pumping in photoluminescence compared with Ge as a …