Dawn of nitride ferroelectric semiconductors: from materials to devices
III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …
been extensively investigated in the past decades. New functionalities, such as …
III-Nitride nanowire optoelectronics
Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …
intensively studied in the past decade. Unique to this material system is that its energy …
Doping of III-nitride materials
P Pampili, PJ Parbrook - Materials Science in Semiconductor Processing, 2017 - Elsevier
In this review paper we will report the current state of research regarding the doping of III-
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …
Study on the preparation of InN films under different substrates and nitrogen-argon flow ratios and the effect of operating temperature on carrier transport in p-NiO/n …
J Zhang, W Peng, Y Zhou, G Xiang, Y Liu, J Zhang… - Vacuum, 2024 - Elsevier
In this paper, the properties of indium nitride (InN) semiconductor films deposited by
magnetron sputtering were studied. The effects of different substrates (Al 2 O 3, ITO and Si) …
magnetron sputtering were studied. The effects of different substrates (Al 2 O 3, ITO and Si) …
Highly-reliable cell characteristics with 128-layer single-stack 3D-NAND flash memory
S Park, J Lee, J Jang, JK Lim, H Kim… - 2021 Symposium on …, 2021 - ieeexplore.ieee.org
An industry leading 128-layer single-stack 3D-NAND Flash memory with high reliability cell
characteristics is successfully developed for the first time. Single-stack etching of 128 layers …
characteristics is successfully developed for the first time. Single-stack etching of 128 layers …
Large Area Ultrathin InN and Tin Doped InN Nanosheets Featuring 2D Electron Gases
Indium nitride (InN) has been of significant interest for creating and studying two-
dimensional electron gases (2DEG). Herein we demonstrate the formation of 2DEGs in …
dimensional electron gases (2DEG). Herein we demonstrate the formation of 2DEGs in …
Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells
Nominal InN monolayers grown by molecular beam epitaxy on GaN (0001) are investigated
combining in situ reflection high-energy electron diffraction (RHEED), transmission electron …
combining in situ reflection high-energy electron diffraction (RHEED), transmission electron …
Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications
The fabrication of high‐speed electronic and communication devices has rapidly grown the
demand for high mobility semiconductors. However, their high cost and complex fabrication …
demand for high mobility semiconductors. However, their high cost and complex fabrication …
Structural, optical and electrical properties of ZnO–InN quaternary compound films
J Jia, T Hara, S Nakamura, Y Shigesato - Thin Solid Films, 2023 - Elsevier
Abstract The ZnO–InN compound films were fabricated via both RF and DC sputtering by
using indium and zinc metal target, where N 2 O and N 2 gases were employed as the …
using indium and zinc metal target, where N 2 O and N 2 gases were employed as the …
Probing the electrical transport properties of intrinsic InN nanowires
S Zhao, O Salehzadeh, S Alagha, KL Kavanagh… - Applied Physics …, 2013 - pubs.aip.org
We have studied the electrical transport properties of intrinsic InN nanowires using an
electrical nanoprobing technique in a scanning electron microscope environment. It is found …
electrical nanoprobing technique in a scanning electron microscope environment. It is found …