In this review we describe the growth and properties of the dilute bismide semiconductor
alloy GaAs1− xBix and show how its properties are in certain respects complementary to the …

We have used rapid thermal annealing to investigate the influence of N interstitials on the
electronic properties of GaAsN alloys. Nuclear reaction analysis reveals an annealing …

We have measured the absorption coefficient at the fundamental band edge in Ga 1− y In y
As 1− x N x and GaAs 1− x N x alloys. In contrast to what is observed in most III-V …

We have measured the near-band-gap absorption of GaAs 1− x N x thin films with x< 0.012.
The spectra were analyzed with a model which allows a precise determination of the band …

Nanocrystalline structures of GaAs 1− x N x thin films were prepared on 7059 Corning glass
substrates by means of an RF magnetron sputtering system using a GaAs target and N 2 as …

We report the incorporation behaviors of Sb and N in GaAsSbN epilayers grown by gas
source molecular beam epitaxy. Our study reveals that N incorporation is independent of the …

Semiconductor alloys that are lattice matched to GaAs but have a smaller energy band gap
are of interest for numerous applications, including infrared lasers for telecommunications …

Various nitrogen-related defects in Ga As 1− x N x are studied within the framework of the
density-functional theory using a plane-wave pseudopotential method. We use a biaxially …

Although several approaches have been used in the past to investigate the impact of
nitrogen (N) on the electronic structure of GaAs 1− x N x alloys, there is no agreement …

The contribution of the fundamental gap E− as well as those of the E−+ Δ so and E+
transitions to the dielectric function of GaAs 1− x N x (001) alloys were determined from …