Bi-induced changes in the band structure of Ga–V–Bi and In–V–Bi alloys are calculated
within the density functional theory (DFT) for alloys with Bi≤ 3.7% and the observed …

The structural and optical properties of GaAs1− xBix alloys for x up to 0.108 have been
investigated by high resolution X‐ray diffraction and photoluminescence (PL). At room …

We studied the effect of Bi incorporation on the hole mobility in the dilute bismide alloy GaAs
1− x Bi x using electrical transport (Hall) and photoluminescence (PL) techniques. Our …

Abstract Knowledge about the temperature dependence of the fundamental band-gap
energy of semiconductors is very important and constitutes the basis for developing …

Band gap alignment in GaAs 1− x Bi x/GaAs quantum wells (QWs) was studied
experimentally by photoreflectance (PR) and theoretically, ab initio, within the density …

We present experimental studies on low-temperature (T= 4.2 K) carrier dynamics in (Ga,
In)(Sb, Bi)/GaSb quantum wells (QWs) with the nominal In content of 3.7% and the Bi …

A comprehensive assessment of the nature of the distribution of sub band-gap energy states
in bulk GaAsBi is presented using power and temperature dependent photoluminescence …

GaSb 1− x Bi x layers with 0< x≤ 0.042 have been studied by photoreflectance in 15–290 K
temperature range. We found that due to the incorporation of Bi atoms into the GaSb host …

Influence of barrier material and structure on carrier quantum confinement in GaAsBi
quantum wells (QWs) is studied comprehensively. Single-and multi-QW structures were …

Abstract Photoreflectance (PR), photoluminescence (PL) and time-resolved PL were applied
to study the optical properties, particularly the localized and delocalized states and carrier …