Growth and strain compensation effects in the ternary Si1−x−yGexCy alloy system
Strain compensation is an important aspect of heterostructure engineering. In this letter, we
discuss the synthesis of pseudomorphic Si1− y C y and Si1− x− y Ge x C y alloy layers on a …
discuss the synthesis of pseudomorphic Si1− y C y and Si1− x− y Ge x C y alloy layers on a …
Carbon-mediated effects in silicon and in silicon-related materials
W Skorupa, RA Yankov - Materials chemistry and physics, 1996 - Elsevier
The present review deals with effects caused by the presence of carbon in single-crystal
silicon, as well as in some silicon-related materials. Three main areas are covered, with …
silicon, as well as in some silicon-related materials. Three main areas are covered, with …
Metastable SiGeC formation by solid phase epitaxy
JW Strane, HJ Stein, SR Lee, BL Doyle… - Applied physics …, 1993 - pubs.aip.org
We report the synthesis and detailed structural characterization of SiGeC metastable alloys
formed by solid phase epitaxial regrowth. Epitaxial layers with 0.7 and 1.4 at.% C are formed …
formed by solid phase epitaxial regrowth. Epitaxial layers with 0.7 and 1.4 at.% C are formed …
20-nm magnetic domain wall motion memory with ultralow-power operation
S Fukami, M Yamanouchi, KJ Kim… - 2013 IEEE …, 2013 - ieeexplore.ieee.org
We study the write and retention properties of magnetic domain wall (DW)-motion memory
devices with the dimensions down to 20 nm. We find that the write current and time are …
devices with the dimensions down to 20 nm. We find that the write current and time are …
Chemical vapor deposition of heteroepitaxial Si1− x− yGexCy films on (100) Si substrates
Z Atzmon, AE Bair, EJ Jaquez, JW Mayer… - Applied physics …, 1994 - pubs.aip.org
Thin heteroepitaxial films of Si1x yGexCy have been grown on 100Si substrates using
atmospheric pressure chemical vapor deposition at 625 C. The crystallinity, composition …
atmospheric pressure chemical vapor deposition at 625 C. The crystallinity, composition …
The growth and characterization of Si1−yCy alloys on Si(001) substrate
We have prepared Si1− y C y alloy layers on Si (001) substrates using solid‐source
molecular‐beam epitaxy. The lattice mismatch between diamond and Si is about 50%. Thus …
molecular‐beam epitaxy. The lattice mismatch between diamond and Si is about 50%. Thus …
Epitaxial growth and characterization of Ge1−xCx alloys on Si(100)
M Krishnamurthy, JS Drucker, A Challa - Journal of applied physics, 1995 - pubs.aip.org
The initial stages (< 20 monolayers) of molecular beam epitaxial growth of Ge1− x C x on Si
(100) has been studied using both in situ surface analytical techniques and ex situ electron …
(100) has been studied using both in situ surface analytical techniques and ex situ electron …
Reduction of secondary defect density by C and B implants in GexSi1−x layers formed by high dose Ge implantation in (100) Si
S Lombardo, F Priolo, SU Campisano… - Applied physics …, 1993 - pubs.aip.org
(100) oriented Si substrates were implanted with 70 keV Ge ions at a dose of 3× 1016 cm−
2, corresponding to a Ge peak concentration of≊ 15 at.%. Annealing at 1100° C for 10 s …
2, corresponding to a Ge peak concentration of≊ 15 at.%. Annealing at 1100° C for 10 s …
Improved crystalline quality of Si1− xGex formed by low‐temperature germanium ion implantation
K Shoji, A Fukami, T Nagano, T Tokuyama… - Applied physics …, 1992 - pubs.aip.org
Improvement of crystalline quality in Si, _ xGe, formed by germanium ion implantation has
been found. End-of-range defects were drastically reduced in number by lowering the …
been found. End-of-range defects were drastically reduced in number by lowering the …
Application of silicon-germanium in the fabrication of ultra-shallow extension junctions for sub-100 nm PMOSFETs
P Ranade, H Takeuchi, WC Lee… - … on Electron Devices, 2002 - ieeexplore.ieee.org
This work summarizes the results of several experiments to investigate the potential
applications of Silicon-Germanium alloy in the fabrication of shallow source/drain (S/D) …
applications of Silicon-Germanium alloy in the fabrication of shallow source/drain (S/D) …